Houqiang Fu

We are currently looking for motivated Ph.D. students to join our dynamic and fast-growing group at Arizona State University. You will have the unique opportunity to work on the third-generation semiconductors: wide bandgap (WBG) semiconductors such as GaN, Ga2O3, AlN, and BN. You will be exposed to and gain experience in the whole life-cycle of semiconductors, from MOCVD growth, to device design and simulation, to nanofabrication, to materials and devices characterizations, and circuits and system integration. These exciting and interesting WBG semiconductors are at the forefront of semiconductor materials and devices research, and they are revolutionizing our lives in numerous ways (e.g, LEDs, lasers, power electronics, RF/mm Wave devices for 5G, PICs). This is a research area where you can devote your passion and make a lasting impact. 

Ideal candidates should have a B.S. or M.S. degree with a background in electrical engineering, physics, power electronics and circuits, materials science, photonics, optical engineering, or other related areas. The positions will remain open until filled by qualified candidates. If you are interested, please email your CV to Prof. Fu’s email at houqiang@asu.edu.