Nicole Herbots

Emeritus Professor,

Emeritus College

Bateman Physical Sciences H-Wing 568 TEMPE, AZ 85287-1504
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Long Bio

Professor Emeritus , Ph.D., University Catholique De Louvain, Condensed Matter, Materials and Solid State Physics

Office - PSH 351, Phone - (480) 965-0581

Classes taught at ASU: Undergraduate Classes: I developed "Studio Physics" for teaching calculus-based University Physics to non-majors in an interactive, highly engaging discussion format with large enrollment classes with 100 (2000-01), 200 (2003-04), and 300 (2004-05) students. This includes using both technology such as in-class personal response systems (PRS) with live display and low cost, small tech "desk experiments" during lectures. "Studio Physics" involvies for example having each student bend repeatedly a paper clip to physically experience the heat release under his/her fingers and experience physically the hardening from atomic bond breaking - to achieve an actual sensorial observation of the physical work as opposed to only remote computer simulations or demonstrations. Studio Physics consists also in having the whole class drop his/her pencil from varying heights (low, mid, heigh) above their desk to explore the relationship between potential energy and the role of spatial location/configuration in a potential such as the gravitational potential of the earth, and direct observation of energy conservation as the velocity and kinetic energy of the pens is seen to increase with drop height and increasing initial potential energy. "Studio Physics" is implemented for Calculus based University Physics for Engineers, Chemists and Majors, for first semester I (Mechanics) PHY 121, second semester II (Electricity & Magnetism), PHY 131, and third/fourth III (Modern Physics) PHY 361. It arose in part from the NSF-funded Foundation Coalition for A Better Engineering Education , which integrated Math, Physics, Engineeing 101, and English 101 for first year engineering students cohorts, I also taught Advanced Physics Laboratory PHY 334, Graduate Classes: Graduate Solid State Physics PHY 581, NSF funded Multidisciplinary course on Materials Synthesis & Processing PHY/MSE/CHM 391, Physics Laboratory Research for the gifted students PHY 499 (Individualized Instruction), PHY495 (Undergraduate Research Project) PHY 592 (Master Thesis Research) 4, PHY 794 (Graduate Research seminar),PHY 792 (Graduate Thesis Research) - Advanced Ion Beam Analysis Seminar: Combining MeV Ion Channeling and Nuclear Resonance Energy Profiling

Classes taught at MIT in Course III Department of Materials Science & Engineering: Graduate Classes: (1) Electronic Devices and Materials, (2) Electronic Materials Processing, (3) IAP "Growing Materials Atom-by-Atom" Advanced Molecular Techniques for Surface and Thin Film Synthesis and Processing, (Molecular Beam Epitaxy, Chemical Vapor Deposition, Ion Implantation, Ion Beam Depostion, etc..) and "Looking at Materials Atom-by-Atom: Advanced Molecular Techniques for Surface and Thin Film Characterization. Undergraduate Classes: Electronic Materials Processing Laboratory in a teaching clean-room.

BIO-Narrative: Nicole Herbots, i.r., PhD UCL, doctor ingenieur, joined ASU's Department of Physics & Astronomy in 1991 ,after 4 years as a faculty at MIT (1987-1991), and 3.5 years as research scientist in the Solid State Division at Oak Ridge National Laboratory (1984-1987). She is presently a professor emeritus in Physics at ASU. She is an inventor who holds multiple patents in semiconductors, medical electronics, molecular inorganic and organic nanophases and nanoscale technology. She is also a science educator who won a teaching award from engineering students for her development of interactive in-class and desktop experiments to teach fundamental and quantum physics concepts to undergraduates, and for her use of technology and whiteboards. She was an IBM Professor of Electronic Materials and a Carl Soderberg professor at MIT and a researcher in the Particle-Solid Interactions in the Solid State Division at Oak Ridge National Lab.

She founded and directs at ASU the Combined Ion & Molecular Deposition and SiO2 Laboratories. She earned her doctorate in Applied Physics at the Université Catholique de Louvain, where her work involved 3 departments – Condensed Matter Physics, Nuclear Physics (UCL Cyclotron facility), and Electrical Engineering (UCL clean-room WINFAB).

Her students research & model low temperature (T<480 K) synthesis of new semiconductor nanophases such as sub-nanometer ordered silicon dioxides (US Patent 6,613,677) & SiGeO2 (US patent 5,124,421).

Her methods, CIMD (US Patent 4,800,200) combines molecular beams, Ion Beam Deposition, Ion Beam Oxidation & Nitridation, & new low temperature (T ≤ 200° C) techniques such as the Herbots-Atluri Clean, the EpOX™ process, EpOxNOx™ and SilOxSi(S)™ to produce templates for (hetero) epitaxy in her clean-room laboratory, "nanostacks" of ultrathin films to create high performance gate oxides, peroskvites and photovoltaic surfaces and wafer bonding.

Her most recent technology disclosures are at the boundary of condensed matter physics, biology and medical electronics, with applications in medical devices implants such as integrated single device medical implants and InterOcular Lenses (IOL's) used in cataract surgery to replace clouded natural lenses and restore the ability to focus eye vision.

In physics instruction research,

N. Herbots implemented the Peer instruction method developped by Erik Mazur at Harvard University starting as early in 1993 in large enrollment physics classes (270 students) using recitations and hands-on experiments in Modern Physics. In 1997, engineering students awarded her a Physics instruction award for this innovation.

In 1998-1999, N. Herbots integrated further the Physics Modellng approach in her NSF-Foundation Coalition class, included whiteboarding during lectures, and added the Energy Conservation-thread and Materials/Atomc model-thread to build curriculum narratives. She also used on-line homework submission and class-room computers for real-time individualized discussions with students. She also systematically integrated outcomes instruments (FCI, MBT, CSEM) for students and instructors (RTOP) for each course.

In 2000-2001, with support for ACEPT, N. Herbots introduced desk-stop experiments and Personal Response systems (individual clickers) to large lectures in physics while developping a new series of desk-stop experiments for electricity & magnetism.

In 2003-2004, she introduced for the first time the use of on-line homework tutorials, conceptual and quantitative physics problem-solving with Mastering Physics.

LABORATORY FACILITIES CONSTRUCTED WHILE AT ASU:

1) N. Herbots' Combined Ion and Molecular Deposition/SiO2 Class 100 Clean Room Laboratory has an area of 400 square feet. It includes among others

- a new 16" wafer compatible and recently upgraded class 10 Wet Chemical Processing Laminar Flow Hood, where RCA cleaning, Herbots-Atluri Cleaning (US patent 6,613,677) , Langmuir-Blodgett molecular film formation, wafer bonding between Si-based materials, and nano-phase & interphase synthesis can be conducted, including commensurate beta-crystobalite on (1x1) Si(100) at 300 K.

- an newly upgraded hazardous materials, HF compatible customized glove-box made exclusively of polyproylene and teflon, with an 8 cubic feet vented loadlock, and a 24 cubic feet work volume totally contained and vented to an acid hood, where a controlled atmosphere of nitrogen, oxygen, helium, argon or forming gas can be used for Langmuir-Blodgett molecular film formation, wafer bonding between Si-based materials, and nano-phase & interphase synthesis can be conducted, including commensurate beta-crystobalite on (1x1) Si(100) at 300 K

- a three-chambered UHV system with a loadlock, annealing chamber, controlled atmosphere loading, 6 simulatenous deposition sources (CIMD 40 cc Si and Ge, Boron K-cell, CIMD carbon, and a triple oven metal depostion source including Titanium,

The CIMD portion of the CIMD/SIO2 lab can be toured virtually at http://ceaspub.eas.asu.edu/phy132/herbots.htm, thr SiO2/Bio-Medical Materials Synthesis and Characterization Laboratory can be toured at www.SiO2WaferBonding.com, www.SiO2BioMolecularFilms.com, www.SiO2HydroAffinity.com and www.SiO2MEIS.com

The IBeam User facility where the CIMD and some of the SiO2/Wafer Bonding/SiO2HydroAffinity facilities are located can be toured at http://www.ibeam.asu.edu/

Synthesis and Processing instrumentation description is described in several US Patents including 6,613,677 (granted 9/2/03), 5,241,214, 4,800,100 and the 6 patents listed below.

PROFESSIONAL EXPERIENCE

Massachusetts Institute of Technology janvier 1987 à août 1991

IBM Professor of Electronic Materials, Course III, DMSE

Carl SodeBerg Professor of Materials Science & Engineering (Dpt of Mat Sci & Eng)

Research: Modelling, Computer Simulations, Experimentation and Surface Analysis via Scanning Tunneling Microscopy (STM) of direct Ion Beam Deposition (IBD), Ion Beam Oxidation (IBO), Ion Beam Nitridation (IBN) and Combined Ion Molecular Deposition (CIMD, US Patent 4,800,100.

Design and Construction of a multi-chambered UHV Combined Ion and Molecular Deposition (CIMD) and class 100 clean-room including in-situ angular resolved X-ray Photoelectron Spectrometry (XPS), a.k.a as ESCA.

Surface, Interface and Thin Film analysis via Rutherford Backscattering Spectrometry (RBS) combined with Ion Channeling and the 3.045±0.005 MeB alpha(016,O16)alpha Nuclear Resonance Analysis (NRA), 200 keV Transmission Electron Microscopy (TEM) in plane view and cross-section, X-ray rocking curve crystal and thin film strain analysis, Secondary Ion Mass Spectroscopy (SIMS) of IBD

Oak Ridge National Laboratory - Solid State Division, Particle-Solid Interaction Group/SMAC Facility

Research Scientist · septembre 1984 à janvier 1987 · Oak Ridge, Tennessee

RESEARCH: 5 eV -1 keV very low energy Direct Ion Beam Deposition (IBD) of thin isotopic semiconductors films, superlattices and ultra-thin room temperature oxides on Si(100), including amorphous, poylcrystalline and (hetero)epitaxial Si30 and Ge74.

EDUCATION:

Université catholique de Louvain PhD in Applied Physics, Microelectronic Science ·

I.R.S.I.A Doctoral Fellow · août 1981 à septembre 1984 ·Louvain-la-Neuve

3-year doctoral research in Applied Physics, in the Science of Microelectronics: Thin/Film IC processing in the Electrical Engineering Class 100 clean-room with Prof. Van de Wiele, Ion Beam Analysis on the RBS line at the UCL Van der Graaff accelerator in the Cyclotron with Prof. Grégoire, and Auger Electron Spectroscopy and Scanning Microscopy with Porf. Bertrand

Metal/Semiconductor interfaces, polysilicon, MOS structures, doping, Rutherford Backscattering Spectrometry, Channeling, Auger Electron Spectroscopy, Transmission and Scanning Electron Micscopy, IC fabrication of electrical testing structures for ohmic contact resistances

Université catholique de Louvain Engineer in Applied Physics, Senior Thesis:

"Design, Construction and Testing of Rutherford Backscattering Vacuum Chamber and beamlime and Testing with As-doped Si(100) via Ion Implantation and Au films on Si(100)

Prof. Herbots sample Class web pages can be seen at: PHY 121 http://phyastweb.la.asu.edu/classes/phy121-herbots/ PHY 131 http://phyastweb.la.asu.edu/phy131-herbots/ PHY 334 http://phyastweb.la.asu.edu/phy334-herbots/

Selected PUBLICATIONS

Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis S. R. Narayan, J. M. Day, H. L. Thinakaran, N. Herbots, M. E. Bertram, C. E. Cornejo, T. C. Diaz, K. L. Kavanagh, R. J. Culbertson, F. J. Ark, S. Ram, M. W. Mangus, R. Islam. (2018). MRS Advances 100, 1-12.

Infrared spectroscopic analysis of an ordered Si/SiO2 interface K. T. Queeney N. Herbots, Justin M. Shaw, V. Atluri, Y. J. Chabal Appl. Phys. Lett. 84, 493 (2004); https://doi.org/10.1063/1.1644030

Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements. Qian Xing, N. Herbots, M. Hart, J. D. Bradley, B. J. Wilkens, D. A. Sell, Clive H. Sell, Henry M. Kwong Jr, R. J. Culbertson, and S. D. Whaley, AIP Conference Proceeding of the International Conference on the Application of Accelerators in Research and Industry (CAARI), Vol . 1336 pp. 201-207 (May 2011) DOI:10.1063/1.3586089

Particle-.Induced X-Ray Emission (PIXE) Of Silicate Coatings On High Impact Resistance Polycarbonates Qian Xing, M. A. Hart, R. J. Culbertson, J. D. Bradley, N. Herbots, Barry J. Wilkens, David A. Sell, Clarizza Fiel Watson: 06/2011; 1336. DOI:10.1063/1.3586109

IBMM of OH adsorbates and interphases on Si-based materials. N. Herbots, Qian Xing, M. Hart, J.D. Bradley, D.A. Sell, R.J. Culbertson, Barry J. Wilkens: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2012); 272:330–333. DOI:10.1016/j.nimb.2011.01.09

New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation O. Vancauwenberghe, O. C. Hellman, N. Herbots, and W. J. Tan Appl. Phys. Lett. 59, 2031 (1991); https://doi.org/10.1063/1.106122

Ion Beam Deposition of Materials At 40– 200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation. N. Herbots, B.R. Appleton, S.J. Pennycook, T.S. Noggle, R.A. Zuhr: MRS Online Proceeding Library 01/2011; 51. DOI:10.1557/PROC-51-369

Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion.Nicole Herbots, D. Gloesener, E. J. Van Loenen, A. E. M. J. Fischer: MRS Online Proceeding Library 01/2011; 37. DOI:10.1557/PROC-37-613

Education

Jul 1981 – Sep 1984

Université Catholique de Louvain

Doctor of Philosophy, Applied Physics & Engineering, In the Science of Microelectronics

Louvain-la-Neuve, Belgium

Sep 1976 – Sep 1981

Université Catholique de Louvain

Bachelor of Science & Engineering, Engineering And Applied Physics

Louvain-la-Neuve, Wallonia, Belgium

Curriculum Vitae

Images

First Demo Day for SiO2 NanoTech, LLC, June 5, 2013, which Prof. Herbots founded in 2010

Prof. Research Team for Academic Year 2016-2017

Prof. Herbots research team at the ASU Physics Undergraduate Symposium 2018

Prof. Herbots research team in the ASU Ion Beam Analysis for Materials (IBeAM) she built with Prosf. Culbertson and J.W. Mayer

Prof. Herbots with SiO2 NanoTech's CEO R&D team at the first Spring MRS in Phoenix in 2016

Prof. Herbots research team , Summer 2018

Induction into the National Academy of Inventors, March 2018

Research Interests

1) N. Herbots's facilities & Personal LABORATORIES at ASU:

• ASU USER's FACILITY for

Ion Beam Analysis of Materials (IBeAM), built

by Prof. J.W. Mayer (emeritus), Prof. R.J. Culbertson (former director) and Prof. N. Herbots in 1993,

maintained and upgraded by Academic Professional Barry Wilkens

(see the following link for a lab tour by Prof. Culbertson, Wilkens or myself, for applying for access, submitted request for samples analysis by one of our researchers or AP, or signing up for a research account and IBA training, or schedule user's time: http://lecsss.asu.edu/ibeam,

Prof. Culbertson and Barry Wilkens offer with the LE-CSSS a yearly FREE Ion Beam Analysis workshop in May.

The 2400 square feet IBeAM facility and its 2.1 MeV Tandem Accelerator (requies radiation safety training for user access)

is located in

LeRoy Eyring Center for Solid State Science

which houses IBeAM in a three-bay laboratory specifically designed for supporting the weight and maintain the alignement of the beam-lines.

The GW B38-36-34 laboratory hall provides 2400 square feet of space, and the necessary utilities:

• 2 x 2400 Amps at 220 V,

• 2 MOhms DI water, dry Nitrogen, compressed air, positive pressure,

• 2 chemical hoods with individual exhausts for either corrosive or explosive chemicals,

• closed-loop heat exchanger for CIMD/MBE UHV 3-chambered system in the SiO2/CIMD facility

• 18 MOhms DI water system and access,

• Liquid Nitrogen storage, high purity dry nitrogen Liquid N2 exhaust (0.9999) in the basement of the Goldwater Research Center.

• THE ASU SiO2/CIMD Class 100 clean-room with 4,800 CFM HEPA filtered air flowing into the IBeAM is INTEGRATED to THE IBEAM,

Located inside room B38A, and B38A1 via a curtained, class 1000 stairwell access, the SiO2/Combined Ion and Molecular Deposition Laboratory benefits from direct interfacing between the analytical capabilities of the IBeAM facility (RBS, Ion Channeling, Nuclear Resonance Analysis, PIXE (Particle-Induced X-ray Emission), X-ray diffraction, sample preparation, cutting, annealing and pre-cleaning).

In other words, samples/wafers can be easily transferred from the clean-room, EpOxNox chemical laminar flow hood and CIMD system into the IBA UJV or controlled atmosphere chambers for analysis.

Also called the "SiO2/CIMD lab"

(Founder & Director: Prof. Nicole Herbots )

The SiO2/CIMD lab is contained in a raised floor 20'x20'x10' class 100 Research Clean Room,

with a 10'x5'x10' loadlocked entry with air curtain, tacky mats, complete Class 10 suiting, with in addition complete acid protective gear (Acid aprons with full lenght sleeves, boots, face shields, respirators and double gloving).

http://enpub.fulton.asu.edu/phy132/herbots.htm

Between 2008 and 2010, the SiO2 CIMD lab received a $30,000k Strategic Initiative Award from the Arizona Board of Regents based on the IP output of CIMD research.

etween 2001 and 2011, the SiO2/CIMD lab has generated 10 technology disclosures, 7 provisional patent applications,

7 utility patents applications.

This has resulted in 2 US/International Patents being granted, 2 utility patents filed, 2 provisional patents pending and 2 commercial licenses. The ABOR award has enabled an upgrade of our customized EpOxNox™ wet chemical lamimar food and controlled atmosphere glove box (Class 1) to handle wafers from 1" to 16" for research and technlogy in the following area's:

• Si-Silica Wafer bonding, Nano-Bonding, Epitaxial oxides on Si(100), Atomic smoothing of Si and Si oxides,

• Low Energy Ion Beam Oxidation/Nitridation,

• Combined Ion Molecular Deposition (CIMD), Molecular Beam Epitaxy (MBE) of SiGe, SiGeC, Erbium and Titanium silicides.

A tour of the SIO2/CIMD laboratory: http://enpub.fulton.asu.edu/phy132/herbots.htm

2) N. Herbots Professional PROFILES

• Professional Profile & Activities, Companies I have founded, are listed ON LINKEDIN

http://www.linkedin.com/profile/view?id=1398185&locale=en_US&trk=tab_pro

• Academic Profile and Updates on WWW.ACADEMIA.EDU

http://asu.academia.edu/NicoleHerbots

3) M ost recent PhD Thesis Dissertation Defended in Prof. Herbots CIMD/SiO@/IBeAM/MEIS research group, with Prof. Culbertson as co-chair:

Qian Xing Bradley defended on 4/1/11

"Modeling Mechanisms of Water Affinity and Condensation on Si-based Surfaces via Experiments and Applications"

Based on the following five publications (as of May 2011):

(1) Ion beam analysis of silicon-based surface and correlation with surface energy measurements

Qian Xing, N. Herbots, M. Hart, J. D. Bradley, B. J. Wilkens, D. A. Sell, Clive H. Sell, Henry M. Kwong Jr, R. J. Culbertson, and S. D. Whaley,

AIP Conference Proceeding of the 21st

International

Conference on the Application of Accelerators in

Research and Industry (CAARI), Vol . 1336

pp. 201-207 (May 2011)

(2) Particle-Induced X-ray Emission (PIXE) of silicate coatings on high impact resistance polycarbonates

Qian Xing, M. A. Hart, R. J. Culbertson, J. D. Bradley, N. Herbots, Barry J. Wilkens, David A. Sell, and Clarizza F. Watson,

AIP Conference Proceeding

on the 21st

International

Conference on the Application of Accelerators in Research and Industr y

(CAARI), Vol. 1336, pp. 303-309 (May 2011)

(3)

ABSTRACT

Water affinity and condensation on Si-based surfaces is investigated to address the problem of condensation and fogging on silicone InterOcular Lenses (IOL) used in cataract surgery, using Si(100), silica (SiO2) and PDMS silicone [(SiOCH3)n]. Condensation is described by 2-step nucleation and growth where roughness controls heterogeneous nucleation of droplets followed by Ostwald ripening.

Condensation with wetting on hydrophilic surfaces consists of continuous aqueous films while hydrophobic surfaces exhibit fogging with discrete droplets. Si-based surfaces with wavelength of 300 nm always exhibit condensation with fogging. Below 200 nm, surfaces are found to wet during condensation. Water affinity of Si-based surfaces is quantified via the surface free energy (SFE) using Sessile Drop contact angle analysis, the Young-Dupré equation, and Van Oss theory. Topography is analyzed using tapping mode atomic force microscopy (TMAFM).

Polymer adsorption and ion beam modification of materials (IBMM) can be used to modify surface topography, composition, and SFE, and to alter water affinity of Si-based surfaces

Polymer adsorption of hydroxypropyl methylcellulose (HPMC) cellulose C32H60O19 with areal densities ranging from 1018 atom/cm2 to 1019 atom/cm2 is characterized via Rutherford backscattering spectrometry (RBS), and allows for the substrate to adopt the topography of the polymer film and its hydrophilic properties.

Silica and silicone maintains bulk stoichiometry by 4.265 MeV 12C(α, α)12C and 3.045 MeV 16O(α, α)16O nuclear resonance scattering,and 2.8 MeV He elastic recoil detection (ERD) of hydrogen while He particle induced X-ray emission (PIXE) enables for the arealdensity of polymer films to be measured on Si(100), silica and silicone.

The SFE and topography of Polydimethylsiloxane (PDMS) silicone polymers used for IOL’s can also be modified by IBMM.

IBMM of HPMC cellulose occurs during IBA as well. Damage curves and ERD are shown to characterize surface desorption accurately during IBMM so that ion beam damage can be accounted for during analysis for polymer films areal density, and composition.

IBMM of Si(100)-SiO2 ordered interfaces also induces changes of SFE, as ions disorders surface atoms. The SFE converges for all surfaces, hydrophobic and hydrophilic as ions alter electrochemical properties of the surface via atomic and electronic displacements

CIMD/SIiO2/IBeAM/MEIS Research Group

Nicole Herbots and her students research and model low temperature methods of synthesis and characterization of new semiconductor nanofilms such as sub-nanometer thick ordered silicon dioxides (US Patent 6,613,677, Herbots et al.), SiGe oxides, GaAs oxides, nitrides, oxynitrides and nitrididized oxides (US patent 5,124,421, Herbots et al.), as well as SiGe, SiGeC, SiGeC nanophases. The synthesis methods used include CIMD (US Patent 4,800,200, N. Herbots et al.) which combines molecular beams, ion beam deposition, and IBO (Ion Beam Oxidation), and new low temperature surface processing techniques to produce templates for epitaxy in her clean-room laboratory.

Our three most recent research foci are

1) the synthesis of ultra-efficient, high durability, robust solar cells with extended carrier life-time, low surface recombination via direct bonding of Si(100)/glass encapsulation at T < 500 K using our patented EpONOx and QSimox process and nucleation of ordered NanOxides on OH(1x1)Si(100).

2) A NEW PHYSICS TECHNOLOGY FOR ARTIFICIAL CORNEA & PANCREAS IMPLANTS Synthesis Of Bio-materials Molecule-by-molecule In Two-dimensional Nanophases And Interphases

3) A New Epitaxial Silicon Dioxide 2-D Nanophase nucleated on OH-(1x1) Silicon(100) for C-MOS technology and new epitaxial high-k/peroskovites: SilOxSik

3) Some of our recent patents and technology disclosures are:

ISSUED 12/14/2010: U.S. Application Patent GRANTED 11/9/2010 for U.S. Patent No. 11/741,563, Filed: April 27, 2007:

US Patent 7,851,365 B1 , (granted 12/14/2010) . Methods for Preparing Semiconductor Substrates and Interfacial OxidesThereon . Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R. J. Culbertson & V. Atluri

1) ASU98-11 (11/20/1998), "Long range ordered semiconductor interface phase and oxides." Herbots, N; Co-Inventors (Graduate Students of N. Herbots): Atluri, V. P.; Bradley J.D.; Swati, Banerjee; Hurst, Q.B.; Xiang, J.

2) M6-060 (12/20/2005), "Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon" Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri MBHB Ref. No: 07-151-US ASU Ref. No.: M6-060.

3) M8-040 (10/28/2007), Single/Dual 12" Wafer Processing EPOX R&D Flexible Bench: A Single/Dual 1-16" Wafer Wet Processing Clean Room Bench for R&D and Epoxides (EPOX) Technology. " Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri

4) MP9-035 (10/1/2008) Low Temperature (below 470 K) Wafer Bonding Wet via a cross-bonding nano-interphase (SILOXSI) for biomedical and device applications (10/1/2008) " Inventor(s): N. Herbots, J. D. Bradley, M. Hart, D. A. Sell, J. M. Shaw, R.J Culbertson & V. Atluri

Our six most recent US Patents filed, of which one was granted in 9/2/2003 and the other in 11/9/2010 are

1) US Patent 6,613,677, Herbots et al (granted 9/2/03) "Long range ordered semiconductor interface phase and oxides." 6,613,677, Main Inventor: Herbots, N; Co-Inventors (Graduate Students of N. Herbots): Atluri, V. P.; Bradley J.D.; Swati, Banerjee; Hurst, Q.B.; Xiang, J.

2) U.S. Patent Application No. 11/741,563, Filed: April 27, 2007, pending "Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon" Inventor(s): N. Herbots, J. D. Bradley, J. M. Shaw, R.J Culbertson & V. Atluri MBHB Ref. No: 07-151-US ASU Ref. No.: M6-060.

3) U.S. ApplicationPatent GRANTED 11/9/2010 for U.S. Patent Application No. 11/741,563, Filed: April 27, 2007: Title: Methods for Preparing Semiconductor Substrates and Interfacial Oxides Thereon

4) U. S. Patent Application Case No.: 09-971-PCT Serial No.: PCT/US10/56049 Inventors: Nicole Herbots, James Doug Bradley, Murdock Allen, Hart, David Sell, Shawn D. Whaley and Qian Xing Bradley

Date of Execution Filing Date: November 9, 2010 “Molecular Films for Hydrophobic Implant Surfaces”

5) Provisional patent Application (11/2009): Low Temperature (below 450 K) Wafer Bonding Wet via a cross-bonding nano-interphase (SILOXSI) for biomedical and device application, including an EpOxNox processing tools (10/1/2008) " Inventor(s): N. Herbots, J. D. Bradley, M. Hart, D. A. Sell, J. M. Shaw, R.J Culbertson & V. Atluri MP9-035 (10/1/2008), M8-040 (10/28/07),

6) ON 04/30/2010 Case No.: 08-1316-PCT Serial No.: PCT/US10/33301

“Methods for Wafer Bonding, and for Nucleating Bonding Nanophases”

Inventors: Nicole Herbots, Robert J. Culbertson, James Bradley, Murdock Allen Hart, David Alexander Sell and Shawn David Whaley Date of Execution Filing Date: April 30, 2010

Publications

K Queeney, Nicole Herbots, Justin Shaw, V Atluri, Y Chabal. Infrared spectroscopic analysis of an ordered Si/SiO2 interface. Applied Physics Letters (2004).
Nicole Herbots, V Atluri, P Vasudeva, James Swati, B Quinton, Jiong Xiang, Hurst Banerjee. Long range ordered semiconductor interface phase and oxides. US Patent office (2003).

Research Activity

Herbots,Nicole*. DISCOVERY OF LONG RANGE ORDER & EPITAXY IN SILICON DIOXIDE. RESEARCH CORP(5/8/1998 - 5/7/2003).
Sankey,Otto F*, Bennett,Peter A, Bird,Jonathan, Drucker,Jeffery S, Ferry,David K, Gust,John Devens, Herbots,Nicole, Lindsay,Stuart, Mahajan,Subhash, Marzke,Robert F, Moore,Ana L, Moore,Thomas Andrew, Petuskey,William T, Skromme,Brian John, Smith,David John, Tsong,Ignatius Siu Tung, Wolf,George H. MATERIALS RESEARCH SCIENCE & ENGINEERING CENTER (MRSEC). NSF-MPS(9/1/1996 - 2/28/2003).
Herbots,Nicole*. HYDROGEN PASSIVATION OF O2-FREE SI SURFACES/LOW TEMPS. SEMATECH(8/1/1994 - 10/1/1995).
Herbots,Nicole*. SILICON OXIDATION. MOTOROLA, INC(3/28/1994 - 12/30/1994).
Mayer,James Walter*, Alford,Terry Lynn, Bennett,Peter A, Burrows,Veronica Ann, Cale,Timothy S, Carpenter,Ray W, Culbertson,Robert John, Ferry,David K, Glaunsinger,William, Herbots,Nicole, Kouvetakis,John, Kozicki,Michael N, Krause,Stephen, Mckelvy,Michael J, Menendez,Jose, Pizziconi,Vincent B, Ramakrishna,B L, Reed,Helen Louise, Sieradzki,Karl, Smith,David John, Tsong,Ignatius Siu Tung. UNDERGRAD MATERIALS EDUCATION INITIATIVE. NSF-MPS(10/15/1992 - 3/31/1997).

Courses

2024 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis

2024 Summer

Course Number	Course Title
PHY 792	Research
PHY 792	Research

2024 Spring

Course Number	Course Title
PHY 495	Project Research
PHY 792	Research
PHY 799	Dissertation
MSE 593	Applied Project

2023 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis

2023 Summer

Course Number	Course Title
PHY 792	Research
PHY 792	Research

2023 Spring

Course Number	Course Title
PHY 495	Project Research
PHY 792	Research
PHY 799	Dissertation
MSE 593	Applied Project
PHY 799	Dissertation

2022 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis
MSE 593	Applied Project

2022 Summer

Course Number	Course Title
PHY 792	Research
PHY 792	Research
PHY 592	Research
PHY 592	Research

2022 Spring

Course Number	Course Title
PHY 495	Project Research
PHY 792	Research
PHY 799	Dissertation
MSE 593	Applied Project

2021 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis
MSE 593	Applied Project

2021 Summer

Course Number	Course Title
PHY 792	Research
PHY 792	Research
PHY 592	Research
PHY 592	Research

2021 Spring

Course Number	Course Title
PHY 495	Project Research
PHY 792	Research
PHY 799	Dissertation
MSE 593	Applied Project

2020 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis

2020 Summer

Course Number	Course Title
PHY 792	Research
PHY 592	Research
PHY 592	Research

2020 Spring

Course Number	Course Title
PHY 495	Project Research
PHY 792	Research
PHY 799	Dissertation
MSE 598	Special Topics

2019 Fall

Course Number	Course Title
PHY 792	Research
PHY 492	Honors Directed Study
PHY 493	Honors Thesis
MSE 595	Continuing Registration

2019 Summer

Course Number	Course Title
PHY 792	Research
MSE 598	Special Topics
PHY 592	Research
PHY 592	Research

Presentations

Herbots, Nicole. Foundation Concepts in Physics: Initial Model Building in Mechanics & (2) Electro-magnetism for science majors. First STEM Knowledge Sharing and Consensus Building Workshop, June 22-29, 2004, ASU (Jun 2005).
Bradley, J, Herbots, Nicole, Shaw, J, Atluri, V, Queeney, K, Chabal, Y. Ordered SiO2 phase grown on (1x1) OH-Si(100): Infrared spectroscopy, ion beam analysis and modeling. 32nd Conference on the Physics and Chemistry of Semiconductor Interfaces, Jan 23-27,2005, Bozeman

Honors / Awards

2018 Member of the National Academy of Inventors (NAI), founded to recognize and encourage academic inventors who have a patent issued from the U.S. Patent and Trademark Office (USPTO).

2017 US PTO Patent ISSUED: # 9,589,801 -(ASU) 'Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization; Filed: October 31, 2012 Date of Patent: March 7, 2017 Inventors: Nicole Herbots, Shawn Whaley, Robert Culbertson, Ross Bennett-Kennett, Ashlee Murphy, Matthew Bade, Sam Farmer, Brance Hudzietz

Feb 2016 SiO2 NanoTech Innovation selected for Materials Research Society iMatSci, with CEO Clarizza Watson

2015 US PTO Patent ISSUE: #9,018,077 (ASU)' Methods for wafer bonding, and for nucleating bonding nanophases Filed: April 30, 2010 Date of Patent: April 28, 2015 Inventors: Nicole Herbots, Robert J. Culbertson, James Bradley, Murdock Allen Hart, David Alexander Sell, Shawn David Whaley

Jan 2015 Flinn Foundation Bioscience Entrepreneurship for SiO2 NanoTech, with Clarizza Watson - $30k

Sep 2014 Elected Member-At-Large of the American Physical Society - Four Corners Section

Aug 2014 Arizona Commerce Authority (ACA) for Small Scale Manufacturing - $20k

Nov 2013 ASU College for Liberal Arts and Science - Seed Grant for NanoBondingTM & VitreOxTM Innovation for pilot data ($50k)

Nov 2013 TIE Pitch Award for SiO2 NanoTech LLC, by CEO C.F. Watson, ChE, MBA - $1k

Jun 2013 Edson Student Entrepreneurship Competition for SiO2 NanoTech - $20k

2012 SiO2 NanoTech wins AZ Furnace ($25k) (ASU)

2011 USPTO Patent ISSUED # 7,851,365 (ASU) 'Methods for preparing semiconductor substrates and interfacial oxides thereon Filed: April 27, 2007 Date of Patent: December 14, 2010 Inventors: Nicole Herbots, James Bradley, Justin Maurice Shaw, Robert J. Culbertson, Vasudeva Atluri

2010 Nominated ASU Professor of the Year (ASU)

2009 $12.5k Award, Bausch & Lomb – SiO2 Associates (ASU)

2007 $30k ARBOR Catalytics Award (ASU)

2005 $250k Royalties, Intel License, for US Patent 661377 (ASU)

2003 USPTO Patent ISSUED 6,613,677, (ASU) Long range ordered semiconductor interface phase and oxides Filed: October 19, 2000 Date of Patent: September 2, 2003 Inventors: Nicole Herbots, Vasudeva P. Atluri, James D. Bradley, Banerjee Swati, Quinton B. Hurst, Jiong Xiang

1998 Outstanding Teacher award for “Modern Physics” (ASU)

1998 $50k Research Corporation Award, for “Ordered SiO2 on Si (“ASU)

1997 $30k Intel Award for Research on oxides (ASU)

1994 $25k Eureka Award, Motorola. "Ion Beam Oxidation of SiGe" (ASU)

1993 USPTO Patent ISSUED # 5,124,421, for SiGe-GaAs Oxides (MIT) 'Oxides and nitrides of metastable group IV alloys and nitrides of Group IV elements and semiconductor devices formed thereof iled: April 29, 1991 Date of Patent: August 31, 1993 Assignee: Massachusetts Institute of Technology Inventors: Nicole Herbots, Olof C. Hellman, Olivier P. J. Vancauwenberghe

1993 Nominated for Maria Goepert-Mayer Award (ASU)

1989 USPTO Patent ISSUED 4,800,100, CIMD (MIT) Combined ion and molecular beam apparatus and method for depsiting materials Filed: October 27, 1987 Date of Patent: January 24, 1989 Assignee: Massachusetts Institute of Technology Inventors: Nicole Herbots, Olof C. Hellman

1989 $60k Cal Soderberg Chair (MIT)

1988 $40k AT&T Faculty Award "Atomic Transport Mechanisms At SC Surfaces & Interfaces (MIT)"

1987 $400k IBM Chair of Electronic Materials (MIT)

1986 $1k Martin Marietta Award for Significant Event – Ion Beam Depostion

1981-1984 Three 1-year IRSIA Doctoral Fellowships, $50k per year

Editorships

MRS Online Proceedings LibraryVolume 279, issue 1, December 1992 Symposium A — Beam-Solid Interactions-Fundamentals and Applications

Issue Editors: Robert S. Averback, Lloyd R. Harriott, Nicole Herbots, Michael Nastasi

138 articles in this issue

Professional Associations

American Association for the Advancment of Science (AAAS, since 2011)

American Vaccum Society (AVS, since 1983)

Materuals Research Society (MRS, since 1984)

American Physical Society (APS, since 200)

Graduate Faculties / Mentoring History

Thesis Supervised 10 PhD Thesis completed, 1 PhD Thesis in Progress, 11 M.Sc Thesis Completed, 1 M.Sc Thesis in Progress, 5 B. Sc Thesis Completed

Name Title Completion date

Mohammed Sahal Role of Atomic and Electronic Structure of LiTaO and LiNbO Piezoelectric December 2019, MSc i in Mat. Sci. & Eng.

for Direct NanoBonding™ with Si And SiO2:

Comparison of Measured Surface Energies with Computed G and Infra-Red Absorption

Brian R. Baker Surface energy engineering for LiTaO3 and α-quartz SiO2 April 2019, MSc in Mat. Sci. & Eng.

for low temperature (<220 °c) wafer bonding https://avs.scitation.org/doi/10.1116/1.5095157

https://asu.pure.elsevier.com/en/publications/surface-energy-engineerin…

Ross B. Kennett-Kennett April 2013, Barrett Honors Thesis Physics

Wet NanoBonding™: Catalyzing Molecular Cross-Bridges and Interphases Between Nanoscopically Smoothed Si-Based Surfaces and Tailoring Surface Energy Components

Qian Xing Modeling Mechanisms of Water Affinity and April 2011 , PhD in Physics

Condensation on Si-Based Surfaces

Via Experiments And Applications

https://keep.lib.asu.edu/items/149574

Justin M. Shaw May 2007, Materials Science e Engineering

James D. Bradley , Modeling of Phase formation in ultra-thin

(1-4 nm) SiO2 grown on ordered December 2004, PhD on Physics

Sii(100): Electrical Properties)

• J. Shaw “Ultra-thin (1-4 nm) SiO2 grown on ordered ASU 00,

Si(100): Electrical Properties) May 04 (MS)

Supported by Intel, ARPA,

Q. Hurst (CO-ADVISOR)“Structure of ltra-thin (1-4 nm) sio2 grown

on ordered on si(100): IOn Scattering Analysis

and Simulations may00 (MSc)

Supported by Research Corporation Completed

• Xiang Jiong A comparative Study of Oxidation of Si, SiGe Dec 99 (Ph.D.)

and SiGeC: Kinetics and Electrical Properties

Supported by AFSOR (employed by SGS Thompson, Intel)

• V. Atluri Hydrogen passivation of Si(100) used as May 98 (Ph.D.)

ASU98 for Low Temperature Epitaxy & oxidation Completed

Supported by SEMATECH (now employed by Intel Corporation)

• S. Banerjee Long Term Stability and Reproducibility ( July 98 (MS.)

ASU98 of H-passivated Si(100) Surfaces: Completed

(now employed byIntel)

• B. Jin A Design of Experiment (DOE) Study June 96 (MS.)

ASU96 of Ion Beam Induced Oxidation of Si(100) Completed

(now employed by Cypress Semiconductor)

• P. Ye Synthesis and Chartacterization of heteroepitaxial Aug.95 (PhD)

ASU95 ternary solid solutions of SiGeC on Si Completed

Supported by FGIA, AFSOR (now employed by National Semiconductor)

• S Whaley Quantitative Analysis of Atomic Force Dec 95 (MSc)

ASU95 Microscopy Images of Si(100) and SiGeC Completed.

Supported by Sematech (now employed by Applied Materials)

• S. Baghvat Oxygen Incorporation during Synthesis by Ion Beam Dec 95 (M.Sc)

ASU95 Oxidation & Ion Beam Induced Oxidation of Si Completed.

Suppported by Motorola, Sematech (now employed by Cypress Semiconductor)

• S. Sekaran Ion Beam Oxidation of Si(100) at room temperature June 95 (M.Sc)

ASU 95 Completed.

Suppported by Motorola, Sematech (now employed by Integrated Device Technology)

• O.P.J. Vancauwenberghe On the growth of Semiconductor-based Feb. 1992 (Ph.D.)

MIT'92 Epitaxial and Oxide Films from Low Energy Completed

Ion Beams

Supported by IBM,NSF (employed by IESEE -Ecole Superierure pour Ingenieur, Schlumberger)

• J. Olson Electron Microscopy Study of Damage June 1991 (B.Sc.)

MIT '91 Formation by Low Energy Ions Completed

(now employed by the Motorola)

• S. Motakef Stability of C49 and C54 Titanium Silicides June 1991 (M.Sc.)

MIT'91 Phases under Low Energy Ion Bombardment Completed

Supported by IBM (now employed by the Material Reearch Corporation),

• D.C. Eng Atomic Transport across Al/Doped Si Interfaces Sep. 1991 (Ph.D.)

MIT'91 Completed

Supported by IBM,NSF (now employed by TRW)

• O.C. Hellman Kinetics of Formation and Properties of Silicon and Sep 1991 (Ph.D.)

MIT'91 and Silicon-Germanium AlloyBased Insulators Completed

Grown Using Low Energy Ion Beam Nitridation

Supported by IBM,NSF (now employed by Northwestern University)

• P.A. Cullen Enhancement Of Initial Stages Feb.1990 (Ph.D.)

MIT '90 Of Silicon Oxidation With Implanted Completed

Dopants

Supported by IBM,NSF ( employed by Hewlett-Packard, then Seagate)

• M.T. Ahrens Rutherford Backscattering Spec- June 1990 (B.S)

MIT '90 Trometry Of Gaas Oxides Completed

Supported by US Army (now employed by US Army)

• Ryoichi Shiono Chemical Vapor Deposition Of June 1989 (M.Sc.)

MIT'89 Tungsten Thin Films Completed

Supported by IBM (now employed by Sematech)

• L.C. Rubin Shallow Junction Diodes Formed June 1988 (M. Sc.)

MIT '88 By Implanting Arsenic And Boron Completed

Through Titanium Silicide Films."

Supported by Microdevice (now employed by Eaton) Corporation)

Work History

MicroDrop Diagnostics LLC August 2018 - Present Company Development & R&D Management

Location: Tempe, AZ, USA

Position: coFounder, Manager, CSO

Description Comprehensive, Fast, Accurate, Hand-Held Small Blood Volume Diagnostics to Evaluate Patient Status at triage, ER, ICU.

AccuAngle Analytics LLC July 2018 - Present Management and R&D planning

Location Tempe, AZ, USA

Position co-Founder, Manager, CEO

Description AccuAngle Analytics provide Surface Analytical Services, Training and Software for Image Analysis used in Accurate Contact Angles and Surface Energy Analysis, and Surface Energy Engineering for Wafer bonding.

SiO2 Innovates LLC July 2016 - Present

Location Tempe, AZ, USA

Position: Founder, Manager, CEO 2016 - Present

Description "Innovation with Imagination, From Lab to Fab" is our motto. As founder & CEO, I develop medical devices such as Hand-held, Fast , Accurate, Small-Volume Whole Blood Diagnostics (HemaDrop™), and Water Analysis (InnovaDrop™).

SiO2 NanoTech LLC March 2010 - November 2018 R&D, Prototyping, Commercialization of Innovation

Location Phoenix, AZ, United States

Position Founder, Chief Science Officer 2010-2018

Description "From Lab to Fab" is the motto of SiO2 NanoTech LLC and what SiO2 NanoTech is about. Founder & CSO, I lead R&D in prototyping for end users, for products as VitreOx™, FogKnox™, AVNE™ for Medical Electronics, Surgical Lenses, and endoscopes

Arizona State University August 1991 - Present Department of Physics

Location Tempe, AZ, USA

Position Prof. of Physics (1991-2006) , Emerita (2007-Present)

Description: Leads her research teams, students to learn and develop new scientific and proof-of- concepts in green technology solutions using semiconductor, bio-compatible nano-phases and bio-medical devices. The ocus on thin film synthesis and functionality, and coatings surface affinity modifications at ASU while at her companies , SiO2 Innovates LLC, AccuAngle Analytics LL and MicroDrop Diagnostics LLC, her focus is prototyping devices and technology in direct collaboration with end users.

Director & Founder of ASU CIMD- SiO2, iSiO2-3LCAA and MEIS BSLII Sterile laboratories , Prof. Emerita,

Massachusetts Institute of Technology January 1987 - August 1991

Department of Materials Science and Engineering

Location: Cambridge, MA, United States

Position: IBM Professor of Electronic Materials, Carl Soderbergh Chair of Complex Engineering Systems

Description: RESEARCH - Materials, Thin Films & Surface Characterization, Semiconductor Devices Semiconductor Processing, Introduction to Materials Science, Semiconductor Processing Laboratory TEACHING: Electronic Materials & Devices, Semiconductor Processing Research: Combined Ion & Molecular Deposition (CIMD) , artificially structured materials, modeling & growth of metastable oxides on GaAs and SiGe.

Oak Ridge National Laboratory September 1984 - January 1987, Solid State Division

Location : Oak Ridge, TN, United States

Position Visiting Scientist (1984-85), Member of the Technical Staff/Researcher in the Solid State Division (1985-1987)

Description: Design and construction of an Ion Beam Deposition UHV system, theoretical and computer modeling of IBD, experimental demonstration of IBD epitaxy, isotopic superlattice

Université Catholique de Louvain - UCLouvain September 1981 - September 1984 Department of Electrical Engineering

Location: Louvain-la-Neuve, Belgium

Position: Graduate Student In Applied Physics, in the Science of Microelectronics, IRSIA Doctoral Fellow

Description: Class 10 clean-room processing, deposition (CVD, e-beam), Ion Beam Analysis, electrical characterization, electron microscopy & spectroscopy. Visiting Graduate Fellow, Salford U., UK, FOM-Instituut Amsterdam, CNS-CNET of Grenoble

Service

Delta Upsilon Fraternity at Arizona State University, Faculty Advisor (2004 - 2006)
Tempe Campus Academic Standards Committee, Chair (2004 - 2006)
Physics Education Research Search Committee, Member (2004 - 2005)
Tri-City JCC Day School, Art Masterpiece Presenter - The connection between Art & Science (2004 - 2005)
APS Four Corner Meeting, October 2003, Session Chair (2003)
On leave, On leave (2003)
Physcial Review Letters; Applied Physics Letters, Journal of Vaccum Science and Technollogy, Reviewer (2003)
Tri-City JCC Day School, Art Masterpiece Presenter - The connection between Art & Science (2003)
Tri-City JCC Day-School, Physics Outreach: Presenter and Interviewee as a Career Scientist (2003)

Expertise Areas

Solid State Physics