Farida Selim is an associate professor of materials science and engineering in the School for Engineering of Matter, Transport and Energy in the Ira A. Fulton Schools of Engineering. She obtained her PhD in joint program between Alexandria University, Egypt and Harvard University working with late famous Prof Jene Golovchenko of Harvard University.
https://en.wikipedia.org/wiki/Jene_Golovchenko
Farida has a broad research program encompassing semiconductor development and characterization, photoemission and defect studies and developing new technologies and constructing new instruments and beam lines.
She is the sole inventor of 7 different key patents for easily measuring donor and acceptor ionization energies in semiconductors, novel doping methods, identifying and characterizing traps in semiconductors, measuring transition level in the bandgap, assessing the photoemission and scintillation prospects of materials, new Transparent Conductor of Oxides (TCOS) and novel interfaces. She is the lead author of more than 155 peer review articles on a diverse range of topics.
She is a well known world leader on Positron Annihilation Spectroscopy (PAS) serving and representing USA on 4 international advisory committees related to positron and its applications. She is also the Chair of the International Advisory committee of International Workshop on Semiconductor Oxide (IWSO) and a member of two advisory board committees of organizations related to radiation emission from materials and phosphoresce.
She is a thrust lead and member of two energy Frontier Research Centers (EFRC) from Department of Energy.