Gennady Gildenblat received a MSEE (with honors) from the St. Petersburg Electrical Engineering Institute in 1975 and a PhD. degree in Solid-State Physics from the Rensselaer Polytechnic Institute, Troy, NY, in 1984. He works in the areas of semiconductor device physics and modeling, novel semiconductor devices and semiconductor transport. Dr. Gildenblat has over 130 publications in these areas including several books, invited articles and US patents. In 2006 he joined Arizona State University. He has developed the advanced surface-potential-based SP and PSP compact MOSFET models. The PSP model (joint development with Philips) has been selected as a new international industry standard by the Compact Model Council.
Physics and modeling of semiconductor devices semiconductor transport physics integrated circuit technology
1984, Ph.D. Solid-State Physics, Renssalaer Polytechnic Institute1975, M.S.E.E., St. Petersburg Electrical Engineering Institute
Gildenblat,Gennady*. Physical Foundation for Compact Model of LDMOS for High Power and Analog Applications. SEMICONDUCTOR RESEARCH CORP(10/1/2011 - 12/31/2012).
Gildenblat,Gennady*. Compact Model and LDMOS and DEMOS for High Power and Analog Applications. SRC ENGR. RES. CTR(1/1/2010 - 6/30/2011).
Jalali-Farahani,Bahar*, Barnaby,Hugh James, Gildenblat,Gennady, Vermeire,Bert. Self-Healing Self-Adaptive Low Power High-Resolution Analog-to-Digital Converters for Space Applications. JPL(4/2/2009 - 3/9/2010).
Barnaby,Hugh James*, Gildenblat,Gennady, Vermeire,Bert. Self-healing self-adaptive low power analog-to-digital converters for space applications. JPL(5/8/2008 - 5/3/2009).
Gildenblat,Gennady*. Extensions and Improvements to the PSP Compact Model. SEMICONDUCTOR RESEARCH CORP(10/1/2006 - 9/30/2009).