Brian Skromme
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ENGRC 155 TEMPE, AZ 85287-5706
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Mail code: 5706Campus: Tempe
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Brian Skromme joined the Arizona State University faculty in 1989, where he is presently a professor in solid-state electronics in the School of Electrical, Computer and Energy Engineering. He was also assistant dean for academic and student affairs in the Ira A. Fulton Schools of Engineering from 2011-2019.
From 1985 to 1989, he was a member of the technical staff at Bellcore. He has written more than 140 refereed publications in solid-state electronics and engineering education. His areas of expertise include compound semiconductor materials and devices, wide bandgap semiconductors, optical characterization, and engineering education research. He received a number of awards for both teaching and research, most recently the national Technology Integration Award from the Electrical & Computer Engineering Department Heads Association (ECEDHA) for his work on step-based tutoring software for engineering education.
- Ph.D. Electrical Engineering, University of Illinois at Urbana-Champaign 1985
- M.S. Electrical Engineering, University of Illinois at Urbana-Champaign 1980
- B.S. Electrical Engineering, University of Wisconsin-Madison 1978
Compound semiconductor materials and devices, solid state electronics, optoelectronics. Engineering education.
1. “The vapor phase growth of InP and InxGa1–xAs by the hydride (In-Ga-AsH3-HCl-H2) technique,” L.M. Zinkiewicz, T.J. Roth, B.J. Skromme, and G.E. Stillman, in GaAs and Related Compounds, Vienna, 1980, (Inst. of Physics, London, 1981), p. 19.
2. “Growth and characterization of high purity H2-In-HCl-PH3 VPE InP,” T.J. Roth, B.J. Skromme, T.S. Low, G.E. Stillman, and L.M. Zinkiewicz, in Semiconductor Growth Technology, Proc. Soc. Photo-opt. Instr. Eng. 323, 36 (1982).
3. “An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium,” K.L. Hess, P.D. Dapkus, H.M. Manasevit, T.S. Low, B.J. Skromme, and G.E. Stillman, J. Electron. Mater. 11, 1115-1137 (1982).
4. “High-purity material,” G.E. Stillman, L.W. Cook, T.J. Roth, T.S. Low, and B.J. Skromme, in GaInAsP Alloy Semiconductors (Wiley, Chichester, 1982), pp. 121-166.
5. “High purity GaAs grown by the hydride VPE process,” J.K. Abrokwah, T.N. Peck, R.A. Walterson, G.E. Stillman, T.S. Low, and B. Skromme, J. Electron. Mater. 12, 681 (1983).
6. “Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE,” B.J. Skromme, T.S. Low, T.J. Roth, G.E. Stillman, J.K. Kennedy, and J.K. Abrokwah, J. Electron. Mater. 12, 433-457 (1983).
7. “Spectroscopic characterization studies of the residual donors and acceptors in high purity LPE GaAs,” B.J. Skromme, T.S. Low, and G.E. Stillman, in GaAs and Related Compounds, Albuquerque, 1982 (Inst. of Physics, London, 1983), pp. 485-492.
8. “Incorporation of amphoteric impurities in high purity GaAs,” T.S. Low, B.J. Skromme, and G.E. Stillman, in GaAs and Related Compounds, Albuquerque, 1982 (Inst. of Physics, London, 1983), p. 515-522.
9. “Impact ionization of excitons and shallow donors in InP,” B.J. Skromme and G.E. Stillman, Phys. Rev. B 28, 4602-4607 (1983).
10. “Excited-state donor-to-acceptor transitions in the photoluminescence spectra of GaAs and InP,” B.J. Skromme and G.E. Stillman, Phys. Rev. B 29, 1982-1992 (1984).
11. “Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3,” B.J. Skromme, G.E. Stillman, A.R. Calawa, and G.M. Metze, Appl. Phys. Lett. 44, 240-242 (1984).
12. “Photoluminescence identification of the C and Be acceptor levels in InP,” B.J. Skromme, G.E. Stillman, J.D. Oberstar, and S.S. Chan, J. Electron. Mater. 13, 463-491 (1984).
13. “Identification of the residual acceptors in undoped high purity InP,” B.J. Skromme, G.E. Stillman, J.D. Oberstar, and S.S. Chan, Appl. Phys. Lett. 44, 319-321 (1984).
14. “Neutron transmutation doping of high purity GaAs,” T.S. Low, M.H. Kim, B. Lee, B.J. Skromme, T.R. Lepkowski, and G.E. Stillman, J. Electron. Mater. 14, 477-511 (1985).
15. “Characterization of high purity Si-doped molecular beam epitaxial GaAs,” B.J. Skromme, S.S. Bose, B. Lee, T.S. Low, T.R. Lepkowski, R.Y. DeJule, and G.E. Stillman, J. Appl. Phys. 58, 4685-4702 (1985).
16. “New shallow acceptor levels in GaAs,” B.J. Skromme, S.S. Bose, and G.E. Stillman, J. Electron. Mater. 15, 345-348 (1986).
17. “Growth of high-quality GaAs using trimethylgallium and diethyl-arsine,” R. Bhat, M.A. Koza, and B.J. Skromme, Appl. Phys. Lett. 50, 1194-1197 (1987).
18. “Optical characterization of high purity GaAs and InP grown by vapor levitation epitaxy,” B.J. Skromme, H.M. Cox, and S.G. Hummel, in GaAs and Related Compounds, Las Vegas, 1986 (Inst. of Physics, Bristol, 1987), pp. 177-182.
19. “Growth of ZnSe on GaAs epitaxial layers in a dual chamber molecular beam epitaxy system,” M.C. Tamargo, J.L. de Miguel, R.E. Nahory, and B.J. Skromme, in Growth of Compound Semiconductors, Proc. Soc. Photo- opt. Instr. Eng. 796, 115-116 (1987).
20. “Effects of passivating ionic films on the photoluminescence properties of GaAs,” B.J. Skromme, C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Appl. Phys. Lett. 51, 2022-2024 (1987).
21. “Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices,” B.J. Skromme, R. Bhat, and M.A. Koza, Solid State Commun. 66, 543-547 (1988).
22. “Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition,” B.J. Skromme, R. Bhat, and M.A. Koza, Appl. Phys. Lett. 52, 990-992 (1988).
23. “Photoluminescence characterization of heteroepitaxial ZnSe/GaAs and ZnSe/AlAs grown by MBE,” B.J. Skromme, M.C. Tamargo, J.L. de Miguel, and R.E. Nahory, in Epitaxy of Semiconductor Layered Structures, ed. R.T. Tung, L.R. Dawson, and R.L. Gunshor (Mater. Res. Soc., Pittsburgh, 1988), MRS Proc. Vol. 102, pp. 577-582.
24. “ZnSe/III-V heterostructures grown in a multi-chamber MBE system,” M.C. Tamargo, J.L. de Miguel, D.M. Hwang, B.J. Skromme, M.H. Meynadier, and R.E. Nahory, in Epitaxy of Semiconductor Layered Structures, ed. R.T. Tung, L.R. Dawson, and R.L. Gunshor (Mater. Res. Soc., Pittsburgh, 1988), MRS Proc. Vol. 102, pp. 125-129.
25. “InGaAs/InP superlattice mixing induced by Zn or Si diffusion,” S.A. Schwarz, P. Mei, T. Venkatesan, R. Bhat, D.M. Hwang, C.L. Schwartz, M. Koza, L. Nazar, and B.J. Skromme, Appl. Phys. Lett. 53, 1051-1053 (1988).
26. “Planar doping with gallium of molecular beam epitaxial ZnSe,” J.L. de Miguel, S.M. Shibli, M.C. Tamargo, and B.J. Skromme, Appl. Phys. Lett. 53, 2065-2067 (1988).
27. “GaAs-on-InP heteroepitaxial waveguides grown by molecular beam epitaxy,” Y.H. Lo, R.J. Deri, J. Harbison, B.J. Skromme, M. Seto, D.M. Hwang, and T.P. Lee, Appl. Phys. Lett. 53, 1242-1244 (1988).
28. “Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe,” B.J. Skromme, M.C. Tamargo, J.L. de Miguel, and R.E. Nahory, Appl. Phys. Lett. 53, 2217-2219 (1988).
29. “Growth of II-VI/III-V mixed heterostructures,” M.C. Tamargo, J.L. de Miguel, F.S. Turco, B.J. Skromme, D.M. Hwang, R.E. Nahory, and H.H. Farrell, in Growth and Optical Properties of Wide-Gap II-VI Low Dimensional Semiconductors, ed. T.C. McGill, C.M. Sotomayor Torres, and W. Gebhardt (Plenum, 1989), p. 239-243.
30. “Heteroepitaxy of GaAs on InP by MBE,” J.P. Harbison, Y.H. Lo, J.H. Abeles, R.J. Deri, B.J. Skromme, D.M. Hwang, L.T. Florez, M. Seto, L. Nazar, T.P. Lee, and R.E. Nahory, J. Vac. Sci. Technol. B 7, 354-357 (1989).
31. “Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular beam epitaxy,” B.J. Skromme, S.M. Shibli, J.L. de Miguel, and M.C. Tamargo, J. Appl. Phys. 65, 3999-4005 (1989).
32. “Identification of donors in GaAs by resonantly-excited high-field magnetospectroscopy,” B.J. Skromme, R. Bhat, H.M. Cox, and E. Colas, IEEE J. Quantum Electron. 25, 1035-1045 (1989).
33. “Band bending, Fermi level pinning, and surface fixed charge on GaAs,” E. Yablonovitch, B.J. Skromme, R. Bhat, J.P. Harbison, and T.J. Gmitter, Appl. Phys. Lett. 54, 555-557 (1989).
34. “Planar doping with gallium of MBE grown ZnSe layers on GaAs substrates,” M.C. Tamargo, J.L. de Miguel, S.M. Shibli, and B.J. Skromme, in GaAs and Related Compounds, Atlanta, 1988, (Inst. of Phys., Bristol, 1989), p. 41-46.
35. “Control of impurity incorporation in atomic layer epitaxy: High quality n and p-type GaAs,” E. Colas, R. Bhat, and B.J. Skromme, in GaAs and Related Compounds, Atlanta, 1988, (Inst. of Phys., Bristol, 1989), p. 101-106.
36. “Characterization of heteroepitaxial ZnSe grown by MBE on GaAs, AlAs, and InGaAs,” B.J. Skromme, M.C. Tamargo, F.S. Turco, S.M. Shibli, W.A. Bonner, and R.E. Nahory, in GaAs and Related Compounds, Atlanta, 1988, (Inst. of Phys., Bristol, 1989), p. 205-210.
37. “Low pressure OMCVD growth of device quality GaAs on InP substrates for OEIC applications,” R. Bhat, M.A. Koza, Y.H. Lo, D.M. Hwang, B.J. Skromme, C. Caneau, and C.E. Zah, in GaAs and Related Compounds, Atlanta, 1988, (Inst. of Phys., Bristol, 1989), p. 177-182.
38. “Effects of lattice mismatch on the photoluminescence properties of heteroepitaxial ZnSe on GaAs, InGaAs, and AlAs,” B.J. Skromme, M.C. Tamargo, F.S. Turco, S.M. Shibli, R.E. Nahory, and W.A. Bonner, in Heteroepitaxial Approaches in Semiconductors: Lattice Mismatch and Its Consequences, (Electrochem. Soc., Pennington NJ, 1989), Proc. Vol. 89-5, p. 335-346.
39. “Bulk single crystal Ga1-xInxAs: LEC growth and characterization,” W.A. Bonner, B.J. Skromme, E. Berry, H.L. Gilchrist, and R.E. Nahory, in GaAs and Related Compounds, Atlanta, 1988, (Inst. of Phys., Bristol, 1989), p. 337-342.
40. “Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor phase epitaxial gallium arsenide,” B. Lee, K. Arai, B.J. Skromme, S.S. Bose, T.J. Roth, J.A. Aguilar, T.R. Lepkowski, N.C. Tien, and G.E. Stillman, J. Appl. Phys. 66, 3772-3786 (1989).
41. “Rapid thermal annealing and ion implantation of heteroepitaxial ZnSe/GaAs,” B.J. Skromme, N.G. Stoffel, A.S. Gozdz, M.C. Tamargo, and S.M. Shibli, in Advances in Materials, Processing, and Devices for III-V Compound Semiconductors, ed. D.K. Sadana, L.E. Eastman, and R. Dupuis (Materials Research Society, Pittsburgh, 1989), pp. 391-396.
42. “Multiple chamber molecular beam epitaxy growth system: Growth of GaAs/ZnSe heterostructures,” M.C. Tamargo, J.L. de Miguel, F.S. Turco, B.J. Skromme, M.H. Meynadier, R.E. Nahory, D.M. Hwang, and H.H. Farrell, in Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, SPIE Proc. 1037, 73-77 (1989).
43. “Low pressure OMCVD growth of GaAs on InP for FET and quantum well laser fabrication,” R. Bhat, Y-H. Lo, C. Caneau, C.J. Chang-Hasnain, B.J. Skromme, D.M. Hwang, C.E. Zah, and M.A. Koza, in III-V Heterostructures for Electronic/Photonic Devices, ed. C.W. Tu, V.D. Mattera, and A.C. Gossard (Materials Research Society, Pittsburgh, 1989), Proc. Vol. 145, pp. 367-375.
44. “Electrical characterization of gallium planar doped ZnSe grown by molecular beam epitaxy,” S.M. Shibli, M.C. Tamargo, J.L. de Miguel, B.J. Skromme, R.E. Nahory, and H.H. Farrell, J. Appl. Phys. 66, 4295-4300 (1989).
45. “Atomic layer epitaxy of device quality GaAs,” E. Colas, R. Bhat, B.J. Skromme, and G.C. Nihous, Appl. Phys. Lett. 55, 2769-2771 (1989).
46. “Arsenic doped ZnSe grown by MBE,” S.M. Shibli, M.C. Tamargo, B.J. Skromme, S.A. Schwarz, C.L. Schwartz, R.E. Nahory, and R.J. Martin, J. Vac. Sci. Technol. B 8, 187-191 (1990).
47. “Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescence,” B.J. Skromme, R. Bhat, M.A. Koza, S.A. Schwarz, T.S. Ravi, and D.M. Hwang, Phys. Rev. Lett. 65, 2050-2053 (1990).
48. “Optical characterization of heteroepitaxial ZnTe grown by molecular beam epitaxy,” Y. Zhang, B.J. Skromme, and F.S. Turco, in Electronic, Optical, and Device Properties of Layered Structures, ed. J. Hayes, M.S. Hybertsen, and E.R. Weber (Materials Research Society, Pittsburgh, 1990), MRS Proc. Vol. EA-21, pp. 133-136.
49. “Arsenic doped p-type ZnTe grown by molecular beam epitaxy,” F.S. Turco-Sandroff, M.J.S.P. Brasil, R.E. Nahory, R.J. Martin, Y. Zhang, and B.J. Skromme, Appl. Phys. Lett. 59, 688-690 (1991).
50. “Effects of growth conditions on the optical properties of heteroepitaxial ZnTe grown by molecular beam epitaxy,” Y. Zhang, B.J. Skromme, and F.S. Turco-Sandroff, in Heteroepitaxy of Dissimilar Materials, ed. J.P. Harbison, A. Zangwill, R.F.C. Farrow, and P.S. Peercy, (Materials Research Society, Pittsburgh, 1991), MRS Proc. Vol. 221, pp. 235-240.
51. “Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy,” M.C. Tamargo, R.E. Nahory, B.J. Skromme, S.M. Shibli, A.L. Weaver, R.J. Martin, and H.H. Farrell, J. Crystal Growth 111, 741-746 (1991).
52. “Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition,” M.H. Kim, S.S. Bose, B.J. Skromme, B. Lee, and G.E. Stillman, J. Electron. Mater. 20, 671-679 (1991).
53. “Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator,” S.G. Hummel, Y. Zou, C.A. Beyler, P. Grodzinski, P.D. Dapkus, J.V. McManus, Y. Zhang, B.J. Skromme, and W.I. Lee, Appl. Phys. Lett. 60, 1483-1485 (1992).
54. “Effects of thermal strain on the optical properties of heteroepitaxial ZnTe,” Y. Zhang, B.J. Skromme, and F.S. Turco-Sandroff, Phys. Rev. B 46, 3872-3885 (1992).
55. “ZnSe/ZnCdSe quantum well light emitting diodes,” M.C. Tamargo, M.J.S.P. Brasil, R.E. Nahory, R.J. Martin, H.H. Farrell, T.J. Gmitter, D.E. Aspnes, A.L. Weaver, Y. Zhang, and B.J. Skromme, J. Vac. Sci. Technol. B 10, 692-696 (1992).
56. “Doping studies of ZnSe grown by molecular beam epitaxy,” S.M. Shibli, T. Penna, M.C. Tamargo, and B.J. Skromme, in Proceedings of the 5th Brazilian School on Semiconductor Physics, ed. J.R. Leite, A. Fazzio, and A.S. Chavez, (World Scientific, Singapore, 1992), pp. 444-448.
57. “Band-to-acceptor transitions in the low temperature luminescence spectrum of Li-doped p-type ZnSe grown by molecular beam epitaxy,” Y. Zhang, B.J. Skromme, and H. Cheng, Phys. Rev. B 47, 2107-2121 (1993).
58. “Spectroscopic investigation of Li and P-doped ZnSe grown by molecular beam epitaxy,” Y. Zhang, B.J. Skromme, and H. Cheng, in Semiconductor Heterostructures for Photonic and Electronic Applications, ed. D.C. Houghton, C.W. Tu, and R.T. Tung (Materials Research Society, Pittsburgh, 1993), MRS Proc. Vol. 281, pp. 567-572.
59. “Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular beam epitaxy,” Y. Zhang, B.J. Skromme, S.M. Shibli, and M.C. Tamargo, Phys. Rev. B 48, 10885-10892 (1993).
60. “Optical characterization of compound semiconductors,” B.J. Skromme, book chapter in Handbook of Compound Semiconductors: Growth, Processing, Characterization, and Devices, ed. P.H. Holloway and G.E. McGuire (Noyes, New Jersey, 1995), pp. 678-771.
61. “Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition,” B.J. Skromme, W. Liu, K.F. Jensen, and K.P. Giapis, J. Crystal Growth 138, 338-345 (1994).
62. “Systematic investigation of shallow acceptor levels in ZnSe,” Y. Zhang, W. Liu, B.J. Skromme, H. Cheng, S.M. Shibli, and M.C. Tamargo, J. Crystal Growth 138, 310-317 (1994).
63. “MBE growth and characterization of epitaxial MnS and ZnSe heterostructures on GaAs,” B.J. Skromme, Y. Zhang, W. Liu, B. Parameshwaran, David J. Smith, and S. Sivananthan, in Growth, Processing, and Characterization of Semiconductor Heterostructures, ed. G. Gumbs, B. Weiss, S. Luryi, and G.W. Wicks (Materials Research Society, Pittsburgh, 1994), MRS Proc. Vol. 326, pp. 15-20.
64. “Deep centre photoluminescence in nitrogen doped ZnSe,” I.S. Hauksson, S.Y. Wang, J. Simpson, K.A. Prior, B.C. Cavenett, and B.J. Skromme, Physica Scripta T 54, 20-23 (1994).
65. “Properties of the shallow O-related acceptor level in ZnSe,” J. Chen, Y. Zhang, B.J. Skromme, and K. Akimoto, J. Appl. Phys. 78, 5109-5119 (1995).
66. “Optical characterization of wide gap II-VI materials for visible light emitting devices,” B.J. Skromme, J. Kor. Phys. Soc. 28, S43-S51 (1995) (Invited Paper).
67. “Luminescence as a diagnostic of wide-gap II-VI compound semiconductor materials,” B.J. Skromme, chapter in Annual Reviews of Materials Science, ed. B.W. Wessels (Annual Reviews, Palo Alto, 1995), Vol. 25, pp. 601-646.
68. “Growth and characterization of pseudomorphic single crystal, zinc blende MnS,” B.J. Skromme, Y. Zhang, David J. Smith, and S. Sivananthan, Appl. Phys. Lett. 67, 2690-2692 (1995).
69. “Deep center photoluminescence in nitrogen-doped ZnSe,” I.S. Hauksson, S.Y. Wang, J. Simpson, K.A. Prior, B.C. Cavenett, W. Liu, and B.J. Skromme, Phys. Rev. B 52, 17184-17190 (1995).
70. “Ion beam mixing of ZnSe/CdZnSe strained layer superlattices,” R. Morton, F. Deng, S.S. Lau, S. Xin, J.K. Furdyna, J. Hutchins, B.J. Skromme, and J.W. Mayer, Nucl. Instrum. Meth. B 118, 704-708 (1996).
71. “Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods,” S.-C. Y. Tsen, David J. Smith, J.W. Hutchins, B.J. Skromme, Y.P. Chen, and S. Sivananthan, J. Crystal Growth 159, 58-63 (1996).
72. “MnS/ZnSe on GaAs grown by molecular beam epitaxy,” S. Sivananthan, L. Wang, R. Sporken, J. Chen, B.J. Skromme, and David J. Smith, J. Crystal Growth 159, 94-98 (1996).
73. “Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices,” J.W. Hutchins, B. Parameshwaran, B.J. Skromme, David J. Smith, and S. Sivananthan, J. Crystal Growth 159, 50-53 (1996).
74. “Reactive MBE growth of GaN and GaN:H on GaN/SiC substrates,” M.A.L. Johnson, Z. Yu, C. Boney, W.C. Hughes, J.W. Cook, Jr., J.F. Schetzina, H. Zhao, B.J. Skromme, and J.A. Edmond, in III-V Nitrides, ed. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemar (Materials Research Society, Pittsburgh, 1997), MRS Proc. Vol. 449, pp. 215-220.
75. “Photoluminescence, reflectance, and magnetospectroscopy of shallow excitons in GaN,” B.J. Skromme, H. Zhao, B. Goldenberg, H.S. Kong, M.T. Leonard, G.E. Bulman, C.R. Abernathy, and S.J. Pearton, in III-V Nitrides, ed. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B. Monemar (Materials Research Society, Pittsburgh, 1997), MRS Proc. Vol. 449, pp. 713-718.
76. “Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy,” J.W. Hutchins, B.J. Skromme, Y.P. Chen, S. Sivananthan, and J.B. Posthill, Appl. Phys. Lett. 71, 350-352 (1997).
77. “Strain determination in heteroepitaxial GaN,” B.J. Skromme, H. Zhao, D. Wang, H.S. Kong, M.T. Leonard, G.E. Bulman, and R.J. Molnar, Appl. Phys. Lett. 71, 829-831 (1997).
78. “Optical and magneto-optical characterization of heteroepitaxial gallium nitride,” B.J. Skromme, Mater. Sci. Engrg. B 50, 117-125 (1997). (Invited Paper)
79. “Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN,” B.J. Skromme, J. Jayapalan, D. Wang, and O.F. Sankey, in Nitride Semiconductors, ed. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and S. Strite (Materials Research Society, Warrendale, PA, 1998), MRS Proc. Vol. 482, pp. 537-542.
80. “Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy,” J. Jayapalan, B.J. Skromme, R.P. Vaudo, and V.M. Phanse, Appl. Phys. Lett. 73, 1188-1190 (1998).
81. “Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy,” B.J. Skromme, J. Jayapalan, R.P. Vaudo, and V.M. Phanse, Appl. Phys. Lett. 74, 2358-2360 (1999).
82. “Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity,” B.J. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C.E. Weitzel, T. Gehoski, and D. Ganser, J. Electron. Mater. 29, 376-383 (2000).
83. “Surface recombination and sulfide passivation of GaN,” G.L. Martinez, M.R. Curiel, B.J. Skromme, and R.J. Molnar, J. Electron. Mater. 29, 325-331 (2000).
84. “Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC,” B.J. Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, and D. Ganser, Mater. Sci. Forum 338-342, 1029-1032 (2000).
85. “Photoluminescence, magnetospectroscopy, and resonant electronic Raman studies of heteroepitaxial gallium nitride,” B.J. Skromme, MRS Internet J. Nitride Semicond. Res. 4, 15 (1999). http://nsr.mij.mrs.org/4/15/
86. “Optical activation behavior of ion implanted acceptor species in GaN,” B.J. Skromme and G.L. Martinez, MRS Internet J. Nitride Semicond. Res. 5S1, W9.8 (2000). http://nsr.mij.mrs.org/5S1/W9.8/
87. “100 mm diameter AlGaN and GaN films grown on Si(111) substrates,” H.M. Liaw, P. Fejes, R. Venugopal, J. Wan, G.L. Martinez, B.J. Skromme, and M.R. Melloch, in Compound Semiconductor Power Transistors II and State-of-the-Art Program on Compound Semiconductors XXXII, ed. R.E. Kopf and A.G. Baca (Electrochemical Society, Pennington, NJ, 2000), Vol. PV2000-1, pp. 150-161.
88. “Optical characterization of acceptor implantation in GaN,” B.J. Skromme, G.L. Martinez, A. Suvkhanov, L. Krasnobaev, and D.B. Poker, in State-of-the-Art Program on Compound Semiconductors XXXIII, ed. A.G. Baca and P.C. Chang (Electrochemical Society, Pennington, NJ, 2000), Vol. PV2000-18, pp. 120-131.
89. “Characterization of ion implanted GaN,” B.J. Skromme, G.L. Martinez, L. Krasnobaev, and D.B. Poker, in GaN and Related Alloys—2000, ed. U. Mishra, M.S. Shur, C.M. Wetzel, and K. Kishino (Mater. Res. Soc., Warrendale, PA, 2001), MRS Proc. Vol. 639, pp. G11.39.1-G11.39.6. http://www.mrs.org/cgi-bin/mrs-member/proceedings/fall2000/g/G11_39.pdf
90. “Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers,” B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore, and T. Gehoski, Mater. Sci. Forum 389-393, 455-458 (2002).
91. “Nondestructive characterization of epitaxial structure for high electron mobility transistors,” M. K. Mikhov, E. S. Johnson, C. Della, B. J. Skromme, E. Lan, M. Rittgers, and M. Pelczynski, in GaAs MANTECH Digest of Papers, 2002 International Conference on Compound Semiconductor Manufacturing Technology, pp. 71-74.
92. “Optical characterization of bulk GaN grown by a Na-Ga melt technique,” B.J. Skromme, K. Palle, C.D. Poweleit, H. Yamane, M. Aoki, and F.J. DiSalvo, J. Crystal Growth 246, 299-306 (2002).
93. “Semiconductor Junctions and Barriers,” B. J. Skromme, in Encyclopedia of Materials: Science and Technology-Updates, ed. K.H.J. Buschow, R.W. Cahn, M.C. Flemings, E.J. Kramer, and S. Mahajan (Elsevier Science, Amsterdam, 2003). http://www.sciencedirect.com/science/referenceworks/0080431526
94. “Optical spectroscopy of bulk GaN crystals grown from a Na-Ga melt,” B.J. Skromme, K.C. Palle, C.D. Poweleit, H. Yamane, M. Aoki, and F.J. DiSalvo, Appl. Phys. Lett. 81, 3765-3767 (2002).
95. “Spectroscopic characterization of ion-implanted GaN,” L. Chen and B. J. Skromme, in GaN and Related Alloys—2002, ed. E.T. Yu, Y. Arakawa, A. Rizzi, J.S. Speck, and C.M. Wetzel (Mater. Res. Soc., Warrendale, PA, 2003), MRS Proc. Vol. 743, pp. L11.35.1-L11.35.6.
96. “Optical characterization of bulk GaN grown from a Na/Ga flux,” K. Palle, L. Chen, H. X. Liu, B. J. Skromme, H. Yamane, M. Aoki, C. B. Hoffman, and F. J. DiSalvo, in GaN and Related Alloys—2002, ed. E.T. Yu, Y. Arakawa, A. Rizzi, J.S. Speck, and C.M. Wetzel (Mater. Res. Soc., Warrendale, PA, 2003), MRS Proc. Vol. 743, pp. L3.36.1-L3.36.6.
97. “Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition,” H. X. Liu, G. N. Ali, K. C. Palle, M. K. Mikhov, B. J. Skromme, Z. J. Reitmeyer, and R. F. Davis, in GaN and Related Alloys—2002, ed. E. T. Yu, Y. Arakawa, A. Rizzi, J. S. Speck, and C. M. Wetzel (Mater. Res. Soc., Warrendale, PA, 2003), MRS Proc. Vol. 743, pp. L6.3.1-L6.3.6.
98. “Effects of structural defects on diode properties in 4H-SiC,” B.J. Skromme, K.C. Palle, M.K. Mikhov, H. Meidia, S. Mahajan, X.R. Huang, W.M. Vetter, M. Dudley, K. Moore, S. Smith, and T. Gehoski, in Silicon Carbide 2002--Materials, Processing and Devices, ed. S.E. Saddow, D.J. Larkin, N.S. Saks, A. Schoener, and M. Skowronski (Mater. Res. Soc., Warrendale, PA, 2003), MRS Proc. Vol. 742, pp. K3.4.1-K3.4.6.
99. “Quantum well state of self-forming 3C-SiC inclusions in 4H-SiC determined by ballistic electron emission microscopy,” Y. Ding, K.-B. Park, J.P. Pelz, K.C. Palle, M.K. Mikhov, B.J. Skromme, H. Meidia, and S. Mahajan, Phys. Rev. B (Rapid Commun.) 69, 041305-1 – 041305-4 (2004).
100. “Semiconductor Heterojunctions,” B. J. Skromme, in the Encyclopedia of Materials: Science and Technology-Updates, ed. K. H. J. Buschow, R. W. Cahn, M. C. Flemings, E. J. Kramer, and S. Mahajan (Elsevier Science, Amsterdam, 2006). http://www.sciencedirect.com/science/referenceworks/0080431526
101. “Properties of the 3.4 eV luminescence band in GaN and its relation to stacking faults,” B. J. Skromme, L. Chen, M. K. Mikhov, H. Yamane, M. Aoki, and F. J. DiSalvo, Mater. Sci. Forum, 457-460, 1613-1616 (2004).
102. “Characterization of double stacking faults induced by thermal processing of heavily N-doped 4H-SiC substrates,” B. J. Skromme, M. K. Mikhov, L. Chen, G. Samson, R. Wang, C. Li, and I. Bhat, Mater. Sci. Forum 457-460, 581-584 (2004).
103. “Cubic inclusions in 4H-SiC studied with ballistic electron emission microscopy,” Y. Ding, K.-B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, B. J. Skromme, H. Meidia, and S. Mahajan, J. Vac. Sci. Technol. A 22, 1351-1355 (2004).
104. “Electrostatic force microscopy and secondary electron imaging of double stacking faults in heavily n-type 4H SiC after oxidation,” M. K. Mikhov, B. J. Skromme, R. Wang, C. Li, and I. Bhat, in Progress in Compound Semiconductor Materials III—Electronic and Optoelectronic Applications, ed. D. Friedman, M. O. Manasreh, F. D. Auret, I. Buyanova, and A. Munkholm (Mater. Res. Soc., Warrendale, PA, 2004), MRS Proc. Vol. 799, pp. Z5.21.1-Z5.21.6. http://www.mrs.org/cgi-bin/check_membership_access/proceedings/fall2003/z/Z5_21.pdf
105. “Structural defect-related photoluminescence in GaN,” L. Chen, B. J. Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, and R. D. Dupuis, in GaN and Related Alloys, ed. H. M. Ng, K. Hiramatsu, N. Grandjean, and M. Wraback (Mater. Res. Soc., Warrendale, PA, 2004), MRS Proc. Vol. 798, pp. Y5.55.1-Y5.55.6.
106. “Correlated structural and optical characterization of ammonothermally-grown bulk GaN,” J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, B.J. Skromme, L. Chen, P.J. Hartlieb, E. Michaels, and J.W. Kolis, Appl. Phys. Lett. 84, 3289-3291 (2004).
107. “Band-edge exciton states in AlN single crystals and epitaxial layers,” L. Chen, B.J. Skromme, R.F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M.A. Khan, M.L. Nakarmi, J.Y. Lin, and H.-X. Jiang, Appl. Phys. Lett. 85, 4334-4336 (2004).
108. “Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes,” Y. Wang, G.N. Ali, M.K. Mikhov, V. Vaidyanathan, B.J. Skromme, B. Raghothamachar, and M. Dudley, J. Appl. Phys. 97, 013540-1–013540-10 (2005).
109. “Optical reflectance of bulk AlN crystals and AlN epitaxial films,” L. Chen, B. J. Skromme, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Z. J. Reitmeyer, R. F. Davis, R. F. Dalmau, R. Schlesser, and Z. Sitar, in Proceedings of the International Conference on the Physics of Semiconductors, ed. J. Menendez and C.G. Van de Walle (Amer. Inst. Phys., Melville, NY, 2005), pp. 297-298.
110. “Optical spectroscopy of polytypic quantum wells in SiC,” G. Samson, L. Chen, B.J. Skromme, R. Wang, C. Li, and I. Bhat, in Proceedings of the International Conference on the Physics of Semiconductors, ed. J. Menendez and C.G. Van de Walle (Amer. Inst. Phys., Melville, NY, 2005), pp. 989-990.
111. “Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC,” M. K. Mikhov, G. Samson, B. J. Skromme, R. Wang, C. Li, and I. Bhat, in Proceedings of the International Conference on the Physics of Semiconductors, ed. J. Menendez and C.G. Van de Walle (Amer. Inst. Phys., Melville, NY, 2005), pp. 937-938.
112. “Structural defects and luminescence features in heteroepitaxial GaN grown on misoriented substrates,” J. Bai, M. Dudley, L. Chen, B. J. Skromme, B. Wagner, R. F. Davis, U. Chowdhury, and R. D. Dupuis, J. Appl. Phys. 97, 116101-1–116101-3 (2005).
113. “Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes,” A. Mahajan and B.J. Skromme, Solid State Electron. 49, 945–955 (2005).
114. “Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC,” K.-B. Park, Y. Ding, J. P. Pelz, M. K. Mikhov, Y. Wang, and B. J. Skromme, Appl. Phys. Lett. 86, 222109-1–222109-3 (2005).
115. “Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ~3.4 eV and ~3.2 eV,” J. Bai, M. Dudley, L. Chen, B. J. Skromme, P. J. Hartlieb, E. Michaels, J. W. Kolis, B. Wagner, R. F. Davis, U. Chowdhury, and R. D. Dupuis, in GaN, AlN, InN and Their Alloys, ed. C. Wetzel, B. Gil, M. Kuzuhara, and M. Manfra (Mater. Res. Soc., Warrendale, PA, 2005), MRS Proc. Vol. 831, p. E11.37.1-E11.37.6.
116. “Spreadsheets to promote interactive engagement in semiconductor device courses,” R. Venkatasubramanian and B. J. Skromme, in Proceedings of the 2005 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2005), Session 1526. http://www.asee.org/acPapers/2005-621_Final.pdf
117. “Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN,” J. Bai, X. Huang, M. Dudley, B. Wagner, R. F. Davis, L. Wu, E. Sutter, Y. Zhu, and B. J. Skromme, J. Appl. Phys. 98, 063510-1–063510-9 (2005).
118. “Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes,” Y. Wang, L. Chen, M. K. Mikhov, G. Samson, and B. J. Skromme, Mater. Sci. Forum 527-529, 363-366 (2006).
119. “Formation and properties of Schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation,” Y. Wang, M. K. Mikhov, and B. J. Skromme, Mater. Sci. Forum 527-529, 915-918 (2006).
120. “Development and assessment of interactive spreadsheet software for the teaching of semiconductor device theory,” R. Venkatasubramanian, G. G. Mendez, and B. J. Skromme, in the Proceedings of the 2006 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2006), Session 1526. http://www.asee.org/acPapers/code/getPaper.cfm?paperID=10402&pdf=2006Full1739.pdf
121. “Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer,” H. Chen, B. Raghothamachar, W. Vetter, M. Dudley, Y. Wang and B. J. Skromme, in Silicon Carbide 2006--Materials, Processing, and Devices, ed. M. A. Capano, M. Dudley, T. Kimoto, A. R. Powell, and S. Wang (Mater. Res. Soc., Warrendale, PA, 2006), MRS Proc. Vol. 911, p. B12-03.
122. “Achieving low sheet resistance from implanted p-type layers in 4H-SiC using high temperature graphite capped annealing,” Y. Wang, P. A. Losee, S. Balachandran, I. B. Bhat, T. P. Chow, Y. Wang, B. J. Skromme, J. K. Kim, and E. F. Schubert, Mater. Sci. Forum 556-557, 567-571 (2007).
123. “Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/InGaAs HEMTs due to Si-related DX centers,” B. J. Skromme, A. Sasikumar, B. M. Green, O. L. Hartin, C. E. Weitzel, and M. G. Miller, IEEE Trans. Electron Devices 57 (4), 749-754 (2010).
124. “Automated problem and solution generation software for computer-aided instruction in elementary linear circuit analysis,” C. D. Whitlatch, Q. Wang, and B. J. Skromme, in the Proceedings of the 2012 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2012), pp. 4437-1–4437-19. http://www.asee.org/public/conferences/8/papers/4437/view
125. “Photoluminescence studies of type-II CdSe/CdTe superlattices,” J.-J. Li, L. Yin, S. R. Johnson, B. J. Skromme, S. Wang, X. Liu, D. Ding, C.-Z. Ning, J. K. Furdyna, and Y.-H. Zhang, Appl. Phys. Lett. 101, 061915 (2012).
126. “Teaching linear circuit analysis techniques with computers,” B. J. Skromme, Q. Wang, P. J. Rayes, J. M. Quick, R. K. Atkinson, and T. S. Frank, in the Proceedings of the 2013 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2013)., Session M357, pp. 7940-1–7940-11. http://www.asee.org/public/conferences/20/papers/7940/view
127. “Computer-aided instruction for introductory linear circuit analysis,” B. J. Skromme, P. J. Rayes, C. D. Whitlatch, Q. Wang, A. Barrus, J. M. Quick, R. K. Atkinson, and T. S. Frank, in the Proceedings of the 2013 IEEE Frontiers in Education Conference (Inst. Electrical & Electronics Engrs., Piscataway, NJ, 2013), pp. 314-319. ISBN 978-1-4673-5261-1 https://ieeexplore.ieee.org/document/6684839
128. “Expansion and evaluation of a step-based tutorial program for linear circuit analysis,” B. J. Skromme, P. J. Rayes, B. Cheng, B. McNamara, A. S. Gibson, A. Barrus, J. M. Quick, and R. K. Atkinson, Y.-F. Huang, and D. H. Robinson, in the Proceedings of the 2014 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2014), pp. 10301-1–10301-14. http://www.asee.org/public/conferences/32/papers/10301/view
129. “Recent progress in step-based tutoring for linear circuit analysis courses,” B. J. Skromme, P. Rayes, B. E. McNamara, X. Wang, Y.-F. Huang, D. H. Robinson, X. Gao, and T. Thompson, in the Proceedings of the 2015 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2015), pp. 14118-1–14118-16. http://www.asee.org/public/conferences/56/papers/14118/view
130. “Addressing barriers to learning in linear circuit analysis,” B. J. Skromme and D. H. Robinson, in the Proceedings of the 2015 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2015), pp. 14125-1–14125-15. https://peer.asee.org/addressing-barriers-to-learning-in-linear-circuit-analysis.pdf
131. “Step-based tutoring system for introductory linear circuit analysis,” B. J. Skromme, P. J. Rayes, B. E. McNamara, V. Seetharam, X. Gao, T. Thompson, X. Wang, B. Cheng, Y.-F. Huang, and D. H. Robinson, in the Proceedings of the 2015 IEEE Frontiers in Education Conference (Inst. Electrical & Electronics Engrs., Piscataway, NJ, 2015), pp. 1752-60. https://ieeexplore.ieee.org/document/7344312
132. “Impact of a step-based tutoring system on student learning and motivation,” B. J. Skromme, P. J. Rayes, B. E. McNamara, V. Seetharam, X. Gao, T. Thompson, X. Wang, B. Cheng, Y.-F. Huang, D. H. Robinson, Y. Astatke, J. Ross, and A. L. Holmes, in the Proceedings of the Envisioning the Future of Undergraduate STEM Education: Research and Practice Symposium (2016). https://docs.google.com/viewer?url=http://www.enfusestem.org/wp-content/uploads/2016/04/REVISED-Final-Manuscript.docx&embedded=true
133. “Interactive tutorial system for linear circuit analysis: Impact on learning and novel tutorials,” B. J. Skromme, B. E. McNamara, X. Gao, B. Korrapati, V. Seetharam, Y.-F. Huang, and D. H. Robinson, in Proceedings of the 2016 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2016), p. 25439-1-25439-16, https://peer.asee.org/25439.
134. “Impact of step-based tutoring on student learning in linear circuit courses,” B. J. Skromme, V. Seetharam, X. Gao, B. Korrapati, B. E. McNamara, Y.-F. Huang, and D. H. Robinson, in Proceedings of the 2016 IEEE Frontiers in Education Conference (Inst. Electrical & Electronics Engrs., Piscataway, NJ, 2016), pp. 1-9, http://ieeexplore.ieee.org/document/7757638/.
135. “Step-based tutoring software for complex procedures in circuit analysis,” B. J. Skromme, S. K. Bansal, W. M. Barnard, and M. A. O’Donnell, in Proceedings of the 2019 IEEE Frontiers in Education Conference (Inst. Electrical & Electronics Engrs., Piscataway, NJ, 2019), Covington, KY, USA, 2020, pp. 1-5, DOI: 10.1109/FIE43999.2019.9028520, https://ieeexplore.ieee.org/document/9028520
136. “Interactive editing of circuits in a step-based tutoring system,” B. J. Skromme, C. Redshaw, A. Gupta, S. Gupta, P. Andrei, H. Erives, M. White, D. Bailey, W. L. Thompson II, S. K. Bansal, and W. M. Barnard, in Proceedings of the 2020 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2020), p. 34859-1-34859-16, https://peer.asee.org/34859.
137. “Turning mesh analysis inside out,” B. J. Skromme, W. M. Barnard, and M. White, in Proceedings of the 2020 American Society for Engineering Education Annual Conference & Exposition (Amer. Soc. Engrg. Educat., Washington, D.C., 2020), p. 35403-1-35403-12, https://peer.asee.org/35403.
138. “Teaching series and parallel connections,” B. J. Skromme, M. L. Wong, C. J. Redshaw, and M. A. O’Donnell, IEEE Trans. Educat. 65, pp. 461-470 (2021). DOI: 10.1109/TE.2021.3129505 https://ieeexplore.ieee.org/document/9644582.
139. “Duality as a central organizing theme in linear circuit analysis instruction,” B. J. Skromme, M. L. Wong, and M. A. O’Donnell, in Proceedings of the 2021 IEEE Frontiers in Education Conference (Inst. Electrical & Electronics Engrs., Piscataway, NJ, 2021). DOI 10.1109/TE.2021.3129505. https://ieeexplore.ieee.org/document/9637306
140. “Impact of a step-based tutoring system on student learning at the University of Texas at El Paso,” A. Chavez, H. Erives, M. Velez-Reyes, and B. J. Skromme, in Proc. Amer. Soc. Engrg. Educat. Ann. Conf. (ASEE, Minneapolis, 2022) pp. 1-12. https://peer.asee.org/40585 Paper ID 36666.
141. “Advances in step-based tutoring for linear circuit analysis and comprehensive evaluation,” B. J. Skromme, R. Gupta, T. Nasim, C. J. Redshaw, B. Miller, P. Andre, H. Erives, D. Bailey, G. Wilkins, S. K. Bansal, M. A. O'Donnell, and W. M. Barnard, in Proc. Amer. Soc. Engrg. Educat. Ann. Conf. (ASEE, Minneapolis, 2022) pp. 1-14. https://peer.asee.org/42086 Paper ID 38408.
142. “Step-by-step tutoring support for student success in circuit analysis courses,” B. J. Skromme, M. A. O’Donnell, and W. M. Barnard, in Great Lakes Symposium on VLSI 2024 (GLSVLSI ’24, Clearwater, FL), (ACM, New York, NY, 2024), pp. 347-350. https://doi.org/10.1145/3649476.3658787
- Skromme, Brian John*, Petru, Andrei, Bansal, Srividya, Thompson, Willie, and Velez-Reyes, Miguel. Collaborative Research: Expansion, Optimization, and Dissemination of Step-Based Tutoring Software for Linear Circuit Analysis NSF-EHR-DUE(9/1/18-8/31/22).
- Skromme, Brian John*. Collaborative Research: Implementation and Evaluation of a Sustainable Computer-Based Tutoring System for Introductory Linear Circuit Analysis. NSF-EHR-DUE(9/15/2013 - 8/31/2016).
- Skromme, Brian John*, Atkinson, Robert Kenneth. Problem Generation Solution Student Input and Tutoring Modules for Introductory Linear Circuit Analysis. NSF-EHR-DUE(7/15/2011 - 6/30/2014).
- Skromme, Brian John*. Processing, Characterization and Mapping of SiC Epiwafers. DOW CORNING CORP(12/1/2007 - 2/27/2009).
- Skromme, Brian John*. Replacement Argon Laser Plasma Tube for Research on Wide Band Gap Semiconductor Materials. DOD-NAVY-ONR(2/15/2004 - 2/14/2005).
- Skromme, Brian John*. CCLI: INSTRUCTIONAL MATERIALS TO PROMOTE INTERACTIVE ENGAGEMENT IN SEMICONDUCTOR DEVICE COURSES. NSF-EHR(2/15/2004 - 1/31/2006).
- Skromme, Brian John*, Mahajan, Subhash. Defect Characterization in SiC Buffer Layers. RPI(1/15/2004 - 3/15/2005).
- Skromme, Brian John*. GOALI: Effects of Defects and Degradation Mechanisms in SiC and GaN Devices. NSF-ENG(9/1/2003 - 8/31/2006).
- Mahajan, Subhash*, Skromme, Brian John. BULK GROWTH OF III-NITRIDE CRYSTALS--AN INTEGRATED APPROACH. NORTH CAROLINA STATE UNIV(5/1/2001 - 12/31/2006).
- Skromme, Brian John*. INVESTIGATION AND MITIGATION OF THE ELECTIRCAL EFECTS OF CRYSTAL DEFECTS ON SIC AND GAN DEVICES. NSF-ENG-ECS(9/15/2000 - 4/30/2004).
- Sankey, Otto F*, Bennett, Peter A, Bird, Jonathan, Drucker, Jeffery S, Ferry, David K, Gust, John Devens, Herbots, Nicole, Lindsay, Stuart, Mahajan, Subhash, Marzke, Robert F, Moore, Ana L, Moore, Thomas Andrew, Petuskey, William T, Skromme, Brian John, Smith, David John, Tsong, Ignatius Siu Tung, Wolf, George H. MATERIALS RESEARCH SCIENCE & ENGINEERING CENTER (MRSEC). NSF-MPS(9/1/1996 - 2/28/2003).
- Menendez, Jose*, Skromme, Brian John. ACQUISITION OF DOUBLE MONOCHROMATOR FOR ULTRA-HIGH RESOLUTIO. NSF-MPS(6/1/1995 - 5/31/1996).
- Smith, David John*, Skromme, Brian John. DISLOCATION & DEGRADATION STUDY IN CDTE/SI. UNIV OF ILLINOIS - CHAMP/URBAN(4/11/1995 - 2/14/1998).
- Skromme, Brian John*, Smith, David John. DISLOCATION & DEGRADATION STUDY IN CDTE/SI. UNIV OF ILLINOIS - CHAMP/URBAN(9/15/1994 - 9/14/1997).
- Skromme, Brian John*. OPTICAL CHARACTERIZATION OF PROCESS-INDUCED DAMAGE & POSSIBL. MOTOROLA, INC(7/15/1993 - 10/3/1994).
- Skromme, Brian John*. 2-4 COMPOUND SEMICONDUCTOR BASED VISIBLE LIGHT EMITTING DEVICES. NSF-ENG(8/14/1992 - 2/28/1996).
- Skromme, Brian John*. DOPANT INCORPORATION AND PROPERTIES IN ZnSe. NSF-MPS(8/15/1991 - 7/31/1995).
Courses
2026 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| EEE 590 | Reading and Conference |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
| EEE 202 | Circuits I |
| EEE 352 | Properties Electronic Material |
2026 Summer
| Course Number | Course Title |
|---|---|
| EEE 790 | Reading and Conference |
| EEE 690 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 795 | Continuing Registration |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 592 | Research |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 599 | Thesis |
2026 Spring
| Course Number | Course Title |
|---|---|
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 690 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 492 | Honors Directed Study |
| EEE 202 | Circuits I |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 792 | Research |
| EEE 592 | Research |
| EEE 795 | Continuing Registration |
| EEE 590 | Reading and Conference |
| EEE 795 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 202 | Circuits I |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 790 | Reading and Conference |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2025 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| EEE 590 | Reading and Conference |
| EEE 792 | Research |
| EEE 202 | Circuits I |
| EEE 590 | Reading and Conference |
| EEE 799 | Dissertation |
| EEE 202 | Circuits I |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2025 Summer
| Course Number | Course Title |
|---|---|
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 795 | Continuing Registration |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 592 | Research |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 599 | Thesis |
2025 Spring
| Course Number | Course Title |
|---|---|
| EEE 590 | Reading and Conference |
| EEE 493 | Honors Thesis |
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 499 | Individualized Instruction |
| EEE 690 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 492 | Honors Directed Study |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 792 | Research |
| EEE 592 | Research |
| EEE 590 | Reading and Conference |
| EEE 795 | Continuing Registration |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 790 | Reading and Conference |
| EEE 352 | Properties Electronic Material |
| EEE 492 | Honors Directed Study |
| EEE 202 | Circuits I |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2024 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| CEN 792 | Research |
| EEE 792 | Research |
| EEE 202 | Circuits I |
| EEE 202 | Circuits I |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2024 Summer
| Course Number | Course Title |
|---|---|
| EEE 799 | Dissertation |
| EEE 795 | Continuing Registration |
| EEE 792 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 592 | Research |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 599 | Thesis |
2024 Spring
| Course Number | Course Title |
|---|---|
| EEE 592 | Research |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 690 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 492 | Honors Directed Study |
| EEE 202 | Circuits I |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 792 | Research |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 590 | Reading and Conference |
| CEN 790 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 795 | Continuing Registration |
| CEN 580 | Practicum |
| CEN 792 | Research |
| EEE 590 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 792 | Research |
| EEE 790 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 492 | Honors Directed Study |
| EEE 202 | Circuits I |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2023 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| CEN 792 | Research |
| EEE 792 | Research |
| EEE 592 | Research |
| EEE 202 | Circuits I |
| CEN 790 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
| EEE 436 | Fund of Solid-State Devices |
| EEE 591 | Seminar |
2023 Summer
| Course Number | Course Title |
|---|---|
| EEE 790 | Reading and Conference |
| EEE 690 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 592 | Research |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
| EEE 592 | Research |
| EEE 599 | Thesis |
| EEE 792 | Research |
2023 Spring
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 690 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 792 | Research |
| EEE 590 | Reading and Conference |
| CEN 790 | Reading and Conference |
| EEE 795 | Continuing Registration |
| CEN 580 | Practicum |
| CEN 792 | Research |
| EEE 202 | Circuits I |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 531 | Semiconductor Device Theory I |
2022 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| CEN 792 | Research |
| EEE 202 | Circuits I |
| CEN 790 | Reading and Conference |
| EEE 352 | Properties Electronic Material |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2022 Summer
| Course Number | Course Title |
|---|---|
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
2022 Spring
| Course Number | Course Title |
|---|---|
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 499 | Individualized Instruction |
| EEE 690 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 492 | Honors Directed Study |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 799 | Dissertation |
| EEE 595 | Continuing Registration |
| EEE 590 | Reading and Conference |
| CEN 790 | Reading and Conference |
| EEE 795 | Continuing Registration |
| CEN 580 | Practicum |
| CEN 792 | Research |
| EEE 202 | Circuits I |
| EEE 492 | Honors Directed Study |
| EEE 202 | Circuits I |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
2021 Fall
| Course Number | Course Title |
|---|---|
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 590 | Reading and Conference |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 690 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 592 | Research |
| CEN 792 | Research |
| CEN 790 | Reading and Conference |
| EEE 352 | Properties Electronic Material |
| EEE 202 | Circuits I |
| EEE 492 | Honors Directed Study |
| EEE 493 | Honors Thesis |
| EEE 499 | Individualized Instruction |
| EEE 499 | Individualized Instruction |
2021 Summer
| Course Number | Course Title |
|---|---|
| EEE 690 | Reading and Conference |
| EEE 590 | Reading and Conference |
| EEE 790 | Reading and Conference |
| EEE 592 | Research |
| EEE 595 | Continuing Registration |
| EEE 599 | Thesis |
| EEE 792 | Research |
| EEE 795 | Continuing Registration |
| EEE 799 | Dissertation |
| EEE 590 | Reading and Conference |
Board of Directors, Arizona Nanotechnology Cluster (2013-2026).
Member of Technical Staff, Bellcore, Red Bank, NJ, 1985-1989.
Visiting Researcher in SiC and GaN device group of Syd Wilson, Materials Technology Laboratories, Motorola SPS, Tempe, AZ.9/98-5/99 & 5/00-8/00.
Device Development Engineer (sabbatical leave), Freescale Semiconductor, Tempe, AZ, 9/07-8/08.