Ivan Sanchez Esqueda


ISTB4 551a TEMPE, AZ 85287

Mail code: 5706Campus: Tempe

Ivan Sanchez Esqueda is an assistant professor at the School of Electrical, Computer and Energy Engineering. He received his doctorate from Arizona State University in 2011 for his work on ionizing radiation effects in advanced CMOS technologies. After obtaining his doctoral degree, he spent eight years as a senior electrical engineer and research lead at the University of Southern California, where he led programs on carbonbased nanoelectronics, reliability physics of nanoscale transistors and emerging nanotechnologies for novel computing architectures.
Research lab website: https://faculty.engineering.asu.edu/isesqueda/
 Ph.D. Electrical Engineering, Arizona State University 2011
 M.Sc. Electrical Engineering, Arizona State University 2006
 B.Sc. Electrical Engineering, University of Arizona 2004
Ivan's research interests include nanoelectronics, twodimensional (2D) and onedimensional (1D) materials, device nanofabrication, characterization, analysis, and modeling. The exploration of new device functionalities for novel computing, sensing, and memory applications, such as the hardware implementation of neuromorphic computing and machine learning. His reserach focus includes the fundamental understanding of nanoscale electronics, confinement and scattering effects in lowdimensional electronic systems, computational nanoelectronics and modeling of semiconductor devices. Defectrelated mechanisms and their impact on performance, variability, and reliability of devices and circuits. Modeling and characterization of radiation and aging effects (i.e., wear out) in stateoftheart commercial CMOS and on emerging nanotechnologies.
2022:
 F. A. Mamun, D. Vasileska and I. Sanchez Esqueda, “Impact of BackGate Biasing on the Transport Properties of 22 nm FDSOI MOSFETs at Cryogenic Temperatures,” in IEEE Transactions on Electron Devices, 2022, http://doi.org/10.1109/TED.2022.3199328
 J. Xie, S. Afshari, I. Sanchez Esqueda, “Hexagonal boron nitride (hBN) memristor arrays for analogbased machine learning hardware,” npj 2D Materials and Applications, 2022, 6, 50, https://doi.org/10.1038/s41699022003282
 J. Xie, N. M. Patoary, G. Zhou, M. Y. Sayyad, S. Tongay, and I. S. Esqueda, “Analysis of Schottky barrier heights and reduced Fermilevel pinning in monolayer CVDgrown MoS2 fieldeffecttransistors,” Nanotechnology, 2022, 33, 225702. DOI: https://doi.org/10.1088/13616528/ac55d2
 S. Afshari, M. MusisiNkambwe, and I. S. Esqueda, “Analyzing the impact of memristor variability on crossbar implementation of regression algorithms with smart weight update pulsing techniques,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2022. DOI: 10.1109/TCSI.2022.3144240
 G. Zhou, F. Al Mamun, J. YangScharlotta, D. Vasileska, and I. S. Esqueda, “Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model,” EEE Transactions on Electron Devices, vol. 69, no. 3, pp. 13061312, 2022. DOI: 10.1109/TED.2022.3142650
 I. P. Livingston, I. S. Esqueda, and H. J. Barnaby, “An implicit analytical surface potential based model for long channel symmetric doublegate MOSFETs accounting for oxide and interface trapped charges,” SolidState Electronics, vol. 187, 108193, 2022. DOI: https://doi.org/10.1016/j.sse.2021.108193
2021:
 M. MusisiNkambwe, S. Afshari, H. Barnaby, M. Kozicki, and I. S. Esqueda, “The viability of analogbased accelerators for neuromorphic computing: a survey,” Neuromorphic Computing and Engineering, 2021, 1, 012001.
2020:
 Trivedi, D. B., Turgut, G., Qin, Y., Sayyad, M. Y., Hajra, D., Howell, M., Liu, L., Yang, S., Patoary, N. H., Li, H., Petrić, M. M., Meyer, M., Kremser, M., Barbone, M., Soavi, G., Stier, A. V., Müller, K., Yang, S., Esqueda, I. S., Zhuang, H., Finley, J. J., Tongay, S., Room‐Temperature Synthesis of 2D Janus Crystals and their Heterostructures. Adv. Mater. 2020, 32, 2006320.
2019:
 I. P. Livingston, I. S. Esqueda, H. J. Barnaby, "Explicit approximation of the surface potential equation of a dynamically depleted silicononinsulator MOSFET for performance and reliability simulations," SolidState Electronics, vol. 160, 107609, 2019.
2018:
 X. Yan, H. Wang, I. S. Esqueda, "TemperatureDependent Transport in Ultrathin Black Phosphorus FieldEffect Transistors," Nano Letters, vol. 19, no. 1, pp. 482487, 2018.
 D. Sarkar, I. S. Esqueda, R. Kapadia, “Nanowire FieldEffect Transistors,” in Advanced Nanoelectronics: PostSilicon Materials and Devices, John Wiley and Sons, 2018.
 I. S. Esqueda, H. Zhao, H. Wang, "Efficient learning and crossbar operations with atomicallythin 2D material compound synapses," Journal of Applied Physics, vol. 124, no. 15, pp. 152133, 2018. (Featured Article).
 X. Yan, H. Wang, H. Barnaby, and I. S. Esqueda, "Impact Ionization and Interface Trap Generation in 28nm MOSFETs at Cryogenic Temperatures," IEEE Trans. on Dev. and Mater. Reliab., vol. 13, no. 3, pp. 456462, 2018.
 I. S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang, C. Zhou, “Aligned Carbon Nanotube Synaptic Transistors for LargeScale Neuromorphic Computing,” ACS Nano, vol. 12, no. 7, pp. 73527361, 2018.
 R. Fang, I. Livingston, I. S. Esqueda, M. Kozicki, H. Barnaby, “Bias temperature instability model using dynamic defect potential for predicting CMOS aging,” Journal of Applied Physics, vol. 123, no. 22, pp. 225701, 2018.
 X. Yan, I. S. Esqueda, J. Ma, J. Tice, and H. Wang, “High breakdown electric field in βGa2O3/graphene vertical barristor heterostructure,” Appl. Phys. Lett., vol. 112, no. 3, 032101, 2018. (Editor's Pick)
2017:
 I. S. Esqueda, H. Tian, X. Yan, H. Wang, “Transport properties and device prospects of ultrathin black phosphorus on hexagonal boron nitride,” IEEE Trans. Elec. Dev., vol. 64, no. 12, pp. 51635171, Dec 2017.
 I. S. Esqueda, “Confinement effects on radiation hardness of SOI FinFETs at the scaling limit,” IEEE Electron Device Letters, vol. 38, no. 3, pp. 306309, 2017.
2016:
 I. S. Esqueda and H. J. Barnaby, “SurfacePotentialBased Compact Modeling of BTI,” Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, pp. XT061XT066, April 2016.
2015:
 I. S. Esqueda and C. D. Cress, “Modeling RadiationInduced Scattering in Graphene,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 29069113, 2015.
 P. C. Adell, B. Rax, I. S. Esqueda, and H. J. Barnaby, “Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 24762481, 2015.
 I. S. Esqueda, H. J. Barnaby, M. P. King, “Compact modeling of total ionizing dose and aging effects in MOS technologies,” IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 15011515, 2015.
 I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che and C. Zhou, “The impact of defect scattering on the quasiBallistic transport of nanoscale conductors,” Journal of Applied Physics, 117, 084319, 2015.
 I. S. Esqueda, “The impact of stressinduced defects on MOS electrostatics and shortchannel effects,” Journal of Solid State Electronics, 103, pp. 167172, 2015.
2014:
 I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao and C. Zhou, “Charge trapping in aligned singlewalled carbon nanotube arrays induced by ionizing radiation exposure,” Journal of Applied Physics, 115, 054506, 2014.
 I. S. Esqueda and H. J. Barnaby, “A defectbased compact modeling approach for the reliability of CMOS devices and integrated circuits,” Journal of Solid State Electronics, 91, pp. 8186, 2014.
 Y. Cao, J. Velamala, K. Sutaria, M. Chen, J. Ahlbin, I. S. Esqueda, M. Bajura, M. Fritze, “Crosslayer modeling and simulation of circuit reliability,” IEEE Transactions on ComputerAided Design of Integrated Circuits and Systems, vol. 33, no. 1, pp. 823, 2014.
2013:
 I. S. Esqueda, C. D. Cress, T. J. Anderson, J. R. Ahlbin, M. Bajura, M. Fritze and J. S. Moon, “Modeling radiationinduced degradation in topgated epitaxial graphene fieldeffecttransistors (FETs),” Electronics, no. 2, pp. 234245, 2013.
 I. S. Esqueda and H. J. Barnaby, “Defectbased compact model for circuit reliability simulation in advanced CMOS technologies,” IEEE International Integrated Reliability Workshop (IIRW) Conference Proceedings, pp. 4549, 2013.
 M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. Barnaby, I. S. Esqueda, “Gamma ray induced structural effects in bare and Ag doped GeS thin films for sensor application,” Journal of NonCrystalline Solids, vol. 377, no. 1, pp. 195199, 2013.
2012:
 P. C. Adell, I. S. Esqueda, H. J. Barnaby, B. Rax and A. H. Johnston, “Impact of Low Temperatures (<125 K) on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 30813086, 2012.
 C. D. Cress, J. G. Champlain, I. S. Esqueda, J. T. Robinson, A. L. Friedman and J. J. McMorrow, “Total ionizing dose induced charge carrier scattering in graphene devices,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 30453053, 2012.
 I. S. Esqueda and H. J. Barnaby, “Modeling the NonUniform Distribution of RadiationInduced Interface Traps,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 723727, 2012.
 I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 701706, 2012.
 I. S. Esqueda, Y. Fu, C. D. Cress, J. Zhang, C. Zhou, J. Ahlbin, M. Bajura, G. Boverman and M. Fritze, “Modeling the effect of hysteresis on aligned nanotube FETs exposed to ionizing radiation,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2012.
2011:
 I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, “Modeling Interdevice Leakage in 90 nm Bulk CMOS Devices,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 793799, 2011.
 I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. ElMamouni, and R. D. Schrimpf, “Modeling of Ionizing RadiationInduced Degradation in Multiple Gate Field Effect Transistors,” IEEE Trans. Nucl. Sci., vol. 58, No. 2, pp. 499505, 2011.
 I. S. Esqueda, H. J. Barnaby, P. C. Adell, B. G. Rax, H. P. Hjalmarson, M. L. McLain and R. L. Pease, “Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 29452952, 2011.
 I. S. Esqueda and H. J. Barnaby, “Modeling the nonuniform distribution of radiationinduced interface traps,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 1519, 2011.
 I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 16, 2011.
 P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. S. Esqueda and H. J. Barnaby, “Structural Study of AgGeS Solid Electrolyte Glass System for Resistive Radiation Sensing,” IEEE Workshop on Microelectronics and Electron Devices, pp. 14, 2011.
2010:
 G. J. Schlenvogt, H. J. Barnaby, I. S. Esqueda, K. E. Holbert, J. Wilkinson, S. Morrison, L. Tyler, “Failure Analysis and RadiationEnabled Circuit Simulation of a Dual Charge Pump Circuit,” IEEE Trans. Nucl. Sci., vol.57, no.6, pp.36093614, 2010.
2009:
 I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf and W. Xiong, “Modeling the Radiation Response of FullyDepleted SOI nchannel MOSFETs,” IEEE Trans. Nucl. Sci., vol. 56, pp. 22472250, 2009.
 I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. ElMamouni, and R. D. Schrimpf, “Modeling of Ionizing RadiationInduced Degradation in Multiple Gate Field Effect Transistors,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 26, 2009.
 H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Trans. Circuits and Systems, vol. 56, no. 8 pp. 18701882, 2009.
 M. L. McLain, H. J. Barnaby, I. S. Esqueda, J. Oder and B. Vermeire, “Reliability of High Performance Standard TwoEdge and Radiation Hardened by Design Enclosed Geometry Transistors.” Proceedings of the 47th IEEE Annual International Reliability Physics Symposium (IRPS), pp. 174179, 2009.
2008:
 F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell, I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, W. Xiong, “GateLength and DrainBias Dependence of BandtoBand tunneling induced Drain Leakage in Irradiated Fully Depleted SOI devices,” IEEE Trans. Nucl. Sci., vol. 55, pp. 32593264, 2008.
 H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Custom Integrated Circuits Conference (CICC), pp. 273 – 280, 2008.
< 2008:
 H. J. Barnaby, M. L. McLain, I. S. Esqueda, “Totalionizingdose effects on isolation oxides in modern CMOS technologies,” Nuclear Instruments and Methods in Physics Research B 261, pp. 1142–1145, 2007.
 I. S. Esqueda, H. J. Barnaby, and M. L. Alles, “Twodimensional methodology for modeling radiationinduced offstate leakage in CMOS technologies,” IEEE Trans. Nucl. Sci., vol. 52, pp. 22592264, 2005.
 M. L. McLain, M. Campola, I. S. Esqueda and H. J. Barnaby, “Modeling Dog Bone Gate Geometry nChannel MOSFETs,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2005.
 E. H. Minson, I. S. Esqueda, H. J. Barnaby, R. L. Pease, D. G. Platter and G. Dunham, “Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides,” IEEE Trans. Nucl. Sci., vol. 51, pp. 37233729, 2004.
Courses
2022 Fall
Course Number  Course Title 

EEE 591  Seminar 
EEE 792  Research 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 590  Reading and Conference 
EEE 595  Continuing Registration 
EEE 599  Thesis 
EEE 690  Reading and Conference 
EEE 790  Reading and Conference 
EEE 492  Honors Directed Study 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 592  Research 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 499  Individualized Instruction 
EEE 436  Fund of SolidState Devices 
2022 Summer
Course Number  Course Title 

EEE 690  Reading and Conference 
EEE 590  Reading and Conference 
EEE 790  Reading and Conference 
EEE 592  Research 
EEE 595  Continuing Registration 
EEE 599  Thesis 
EEE 792  Research 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 590  Reading and Conference 
2022 Spring
Course Number  Course Title 

EEE 792  Research 
EEE 790  Reading and Conference 
EEE 592  Research 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 690  Reading and Conference 
EEE 595  Continuing Registration 
EEE 492  Honors Directed Study 
EEE 599  Thesis 
EEE 799  Dissertation 
EEE 595  Continuing Registration 
EEE 590  Reading and Conference 
EEE 795  Continuing Registration 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 531  Semiconductor Device Theory I 
MSE 593  Applied Project 
2021 Fall
Course Number  Course Title 

EEE 790  Reading and Conference 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 590  Reading and Conference 
EEE 595  Continuing Registration 
EEE 599  Thesis 
EEE 690  Reading and Conference 
EEE 592  Research 
EEE 792  Research 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 499  Individualized Instruction 
EEE 598  Special Topics 
2021 Summer
Course Number  Course Title 

EEE 595  Continuing Registration 
EEE 590  Reading and Conference 
EEE 790  Reading and Conference 
EEE 592  Research 
EEE 690  Reading and Conference 
EEE 599  Thesis 
EEE 792  Research 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 590  Reading and Conference 
2021 Spring
Course Number  Course Title 

EEE 531  Semiconductor Device Theory I 
EEE 499  Individualized Instruction 
EEE 690  Reading and Conference 
EEE 493  Honors Thesis 
EEE 790  Reading and Conference 
EEE 592  Research 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 595  Continuing Registration 
EEE 492  Honors Directed Study 
EEE 599  Thesis 
EEE 792  Research 
EEE 799  Dissertation 
EEE 595  Continuing Registration 
EEE 590  Reading and Conference 
EEE 795  Continuing Registration 
EEE 492  Honors Directed Study 
2020 Fall
Course Number  Course Title 

EEE 599  Thesis 
EEE 595  Continuing Registration 
EEE 590  Reading and Conference 
EEE 492  Honors Directed Study 
EEE 499  Individualized Instruction 
EEE 493  Honors Thesis 
EEE 790  Reading and Conference 
EEE 690  Reading and Conference 
EEE 499  Individualized Instruction 
EEE 792  Research 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 592  Research 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 241  Fundamentals Electromagnetics 
2020 Summer
Course Number  Course Title 

EEE 690  Reading and Conference 
EEE 590  Reading and Conference 
EEE 790  Reading and Conference 
EEE 592  Research 
EEE 595  Continuing Registration 
EEE 599  Thesis 
EEE 792  Research 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 590  Reading and Conference 
2020 Spring
Course Number  Course Title 

EEE 790  Reading and Conference 
EEE 592  Research 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 690  Reading and Conference 
EEE 595  Continuing Registration 
EEE 492  Honors Directed Study 
EEE 599  Thesis 
EEE 792  Research 
EEE 799  Dissertation 
EEE 595  Continuing Registration 
EEE 590  Reading and Conference 
EEE 795  Continuing Registration 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
2019 Fall
Course Number  Course Title 

EEE 792  Research 
EEE 499  Individualized Instruction 
EEE 590  Reading and Conference 
EEE 595  Continuing Registration 
EEE 599  Thesis 
EEE 690  Reading and Conference 
EEE 790  Reading and Conference 
EEE 493  Honors Thesis 
EEE 795  Continuing Registration 
EEE 799  Dissertation 
EEE 592  Research 
EEE 241  Fundamentals Electromagnetics 
EEE 492  Honors Directed Study 
EEE 493  Honors Thesis 
EEE 499  Individualized Instruction 
EEE 499  Individualized Instruction 
EEE 492  Honors Directed Study 