Ivan Sanchez Esqueda

2022: 

• F. A. Mamun, D. Vasileska and I. Sanchez Esqueda, “Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures,” in IEEE Transactions on Electron Devices, 2022, http://doi.org/10.1109/TED.2022.3199328
• J. Xie, S. Afshari, I. Sanchez Esqueda, “Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware,” npj 2D Materials and Applications, 2022, 6, 50, https://doi.org/10.1038/s41699-022-00328-2
• J. Xie, N. M. Patoary, G. Zhou, M. Y. Sayyad, S. Tongay, and I. S. Esqueda, “Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors,” Nanotechnology, 2022, 33, 225702. DOI: https://doi.org/10.1088/1361-6528/ac55d2
• S. Afshari, M. Musisi-Nkambwe, and I. S. Esqueda, “Analyzing the impact of memristor variability on crossbar implementation of regression algorithms with smart weight update pulsing techniques,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2022. DOI: 10.1109/TCSI.2022.3144240
• G. Zhou, F. Al Mamun, J. Yang-Scharlotta, D. Vasileska, and I. S. Esqueda, “Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model,” EEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1306-1312, 2022. DOI: 10.1109/TED.2022.3142650
• I. P. Livingston, I. S. Esqueda, and H. J. Barnaby, “An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges,” Solid-State Electronics, vol. 187, 108193, 2022. DOI: https://doi.org/10.1016/j.sse.2021.108193

2021: 

• M. Musisi-Nkambwe, S. Afshari, H. Barnaby, M. Kozicki, and I. S. Esqueda, “The viability of analog-based accelerators for neuromorphic computing: a survey,” Neuromorphic Computing and Engineering, 2021, 1, 012001.

2020: 

• Trivedi, D. B., Turgut, G., Qin, Y., Sayyad, M. Y., Hajra, D., Howell, M., Liu, L., Yang, S., Patoary, N. H., Li, H., Petrić, M. M., Meyer, M., Kremser, M., Barbone, M., Soavi, G., Stier, A. V., Müller, K., Yang, S., Esqueda, I. S., Zhuang, H., Finley, J. J., Tongay, S., Room‐Temperature Synthesis of 2D Janus Crystals and their Heterostructures. Adv. Mater. 2020, 32, 2006320.

2019: 

• I. P. Livingston, I. S. Esqueda, H. J. Barnaby, "Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations," Solid-State Electronics, vol. 160, 107609, 2019.

2018:

• X. Yan, H. Wang, I. S. Esqueda, "Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors," Nano Letters, vol. 19, no. 1, pp. 482-487, 2018.​
• D. Sarkar, I. S. Esqueda, R. Kapadia, “Nanowire Field-Effect Transistors,” in Advanced Nanoelectronics: Post-Silicon Materials and Devices, John Wiley and Sons, 2018.
• I. S. Esqueda, H. Zhao, H. Wang, "Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses," Journal of Applied Physics, vol. 124, no. 15, pp. 152133, 2018. (Featured Article).
• X. Yan, H. Wang, H. Barnaby, and I. S. Esqueda, "Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures," IEEE Trans. on Dev. and Mater. Reliab., vol. 13, no. 3, pp. 456-462, 2018.
• I. S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang, C. Zhou, “Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing,” ACS Nano, vol. 12, no. 7, pp. 7352-7361, 2018.
• R. Fang, I. Livingston, I. S. Esqueda, M. Kozicki, H. Barnaby, “Bias temperature instability model using dynamic defect potential for predicting CMOS aging,” Journal of Applied Physics, vol. 123, no. 22, pp. 225701, 2018.
• X. Yan, I. S. Esqueda, J. Ma, J. Tice, and H. Wang, “High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure,” Appl. Phys. Lett., vol. 112, no. 3, 032101, 2018. (Editor's Pick)

2017:

• I. S. Esqueda, H. Tian, X. Yan, H. Wang, “Transport properties and device prospects of ultra-thin black phosphorus on hexagonal boron nitride,” IEEE Trans. Elec. Dev., vol. 64, no. 12, pp. 5163-5171, Dec 2017.
• I. S. Esqueda, “Confinement effects on radiation hardness of SOI FinFETs at the scaling limit,” IEEE Electron Device Letters, vol. 38, no. 3, pp. 306-309, 2017.

2016:

• I. S. Esqueda and H. J. Barnaby, “Surface-Potential-Based Compact Modeling of BTI,” Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, pp. XT-06-1-XT-06-6, April 2016.

2015:

• I. S. Esqueda and C. D. Cress, “Modeling Radiation-Induced Scattering in Graphene,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2906-9113, 2015.
• P. C. Adell, B. Rax, I. S. Esqueda, and H. J. Barnaby, “Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2476-2481, 2015.
• I. S. Esqueda, H. J. Barnaby, M. P. King, “Compact modeling of total ionizing dose and aging effects in MOS technologies,” IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1501-1515, 2015.
• I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che and C. Zhou, “The impact of defect scattering on the quasi-Ballistic transport of nanoscale conductors,” Journal of Applied Physics, 117, 084319, 2015.
• I. S. Esqueda, “The impact of stress-induced defects on MOS electrostatics and short-channel effects,” Journal of Solid State Electronics, 103, pp. 167-172, 2015.

2014:

• I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao and C. Zhou, “Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure,” Journal of Applied Physics, 115, 054506, 2014.
• I. S. Esqueda and H. J. Barnaby, “A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits,” Journal of Solid State Electronics, 91, pp. 81-86, 2014.
• Y. Cao, J. Velamala, K. Sutaria, M. Chen, J. Ahlbin, I. S. Esqueda, M. Bajura, M. Fritze, “Cross-layer modeling and simulation of circuit reliability,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 33, no. 1, pp. 8-23, 2014.

2013:

• I. S. Esqueda, C. D. Cress, T. J. Anderson, J. R. Ahlbin, M. Bajura, M. Fritze and J. S. Moon, “Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs),” Electronics, no. 2, pp. 234-245, 2013.
• I. S. Esqueda and H. J. Barnaby, “Defect-based compact model for circuit reliability simulation in advanced CMOS technologies,” IEEE International Integrated Reliability Workshop (IIRW) Conference Proceedings, pp. 45-49, 2013.
• M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. Barnaby, I. S. Esqueda, “Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application,” Journal of Non-Crystalline Solids, vol. 377, no. 1, pp. 195-199, 2013.

2012:

• P. C. Adell, I. S. Esqueda, H. J. Barnaby, B. Rax and A. H. Johnston, “Impact of Low Temperatures (<125 K) on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3081-3086, 2012.
• C. D. Cress, J. G. Champlain, I. S. Esqueda, J. T. Robinson, A. L. Friedman and J. J. McMorrow, “Total ionizing dose induced charge carrier scattering in graphene devices,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3045-3053, 2012.
• I. S. Esqueda and H. J. Barnaby, “Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 723-727, 2012.
• I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 701-706, 2012.
• I. S. Esqueda, Y. Fu, C. D. Cress, J. Zhang, C. Zhou, J. Ahlbin, M. Bajura, G. Boverman and M. Fritze, “Modeling the effect of hysteresis on aligned nanotube FETs exposed to ionizing radiation,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2012.

2011:

• I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, “Modeling Inter-device Leakage in 90 nm Bulk CMOS Devices,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 793-799, 2011.
• I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” IEEE Trans. Nucl. Sci., vol. 58, No. 2, pp. 499-505, 2011.
• I. S. Esqueda, H. J. Barnaby, P. C. Adell, B. G. Rax, H. P. Hjalmarson, M. L. McLain and R. L. Pease, “Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 2945-2952, 2011.
• I. S. Esqueda and H. J. Barnaby, “Modeling the non-uniform distribution of radiation-induced interface traps,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 15-19, 2011.
• I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 1-6, 2011.
• P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. S. Esqueda and H. J. Barnaby, “Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing,” IEEE Workshop on Microelectronics and Electron Devices, pp. 1-4, 2011.

2010:

• G. J. Schlenvogt, H. J. Barnaby, I. S. Esqueda, K. E. Holbert, J. Wilkinson, S. Morrison, L. Tyler, “Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit,” IEEE Trans. Nucl. Sci., vol.57, no.6, pp.3609-3614, 2010.

2009:

• I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf and W. Xiong, “Modeling the Radiation Response of Fully-Depleted SOI n-channel MOSFETs,” IEEE Trans. Nucl. Sci., vol. 56, pp. 2247-2250, 2009.
• I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 2-6, 2009.
• H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Trans. Circuits and Systems, vol. 56, no. 8 pp. 1870-1882, 2009.
• M. L. McLain, H. J. Barnaby, I. S. Esqueda, J. Oder and B. Vermeire, “Reliability of High Performance Standard Two-Edge and Radiation Hardened by Design Enclosed Geometry Transistors.” Proceedings of the 47th IEEE Annual International Reliability Physics Symposium (IRPS), pp. 174-179, 2009.

2008:

• F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell, I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, W. Xiong, “Gate-Length and Drain-Bias Dependence of Band-to-Band tunneling induced Drain Leakage in Irradiated Fully Depleted SOI devices,” IEEE Trans. Nucl. Sci., vol. 55, pp. 3259-3264, 2008.
• H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Custom Integrated Circuits Conference (CICC), pp. 273 – 280, 2008.

< 2008:

• H. J. Barnaby, M. L. McLain, I. S. Esqueda, “Total-ionizing-dose effects on isolation oxides in modern CMOS technologies,” Nuclear Instruments and Methods in Physics Research B 261, pp. 1142–1145, 2007.
• I. S. Esqueda, H. J. Barnaby, and M. L. Alles, “Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies,” IEEE Trans. Nucl. Sci., vol. 52, pp. 2259-2264, 2005.
• M. L. McLain, M. Campola, I. S. Esqueda and H. J. Barnaby, “Modeling Dog Bone Gate Geometry n-Channel MOSFETs,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2005.
• E. H. Minson, I. S. Esqueda, H. J. Barnaby, R. L. Pease, D. G. Platter and G. Dunham, “Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides,” IEEE Trans. Nucl. Sci., vol. 51, pp. 3723-3729, 2004.