1) G. F. Formicone, D. Vasileska and D. K. Ferry, 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si, Proceedings of the Fourth International Workshop on Comp. Electronics, 1996.
2) G. F. Formicone, D. Vasileska and D. K. Ferry, Transport in the Surface Channel of Strained Si on a Relaxed Si1-xGex Substrate, Solid State Electronics 41, pp. 879-885, 1997.
3) G. F. Formicone, D. Vasileska and D. K. Ferry, Modeling of Submicron Si1-xGex based MOSFETs by Self-Consistent Monte Carlo Simulation, Phys. Status Solidi (b) 204, pp. 531-533, 1997.
4) D. Vasileska , G. F. Formicone and D. K. Ferry, Doping Dependence of the Mobility Enhancement in Surface-Channel Strained-Si Layer, Proceedings of the Silicon Nanoelectronics Workshop, 1998.
5) D. K. Ferry, D. Vasileska and G. F. Formicone, Carrier Transport and Velocity Overshoot in Strained Si on Si1-xGex Heterostructures, Material Research Society Spring meetings, special Symposium on Epitaxy and Applications of Si-based Heterostructures, April 13-15, 1998.
6) M. Saraniti, G. Zandler, G. F. Formicone, S. Wiggler and S. Goodnick, Cellular Automata Simulation of nm-scale MOSFETs, Semiconductor Science and Technology, 1997.
7) M. Saraniti, G. Zandler, G. F. Formicone and S. Goodnick, Cellular Automata Studies of Vertical Silicon Devices, Proceedings of the Fifth International Workshop on Comp. Electronics, 1997.
8) Formicone, G.F., Saraniti, M., Vasileska, D.Z., Ferry, D.K.; Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer, IEEE Transactions on Electron Devices, Volume 49, Issue 1, Jan. 2002 pp: 125–132
9) Formicone, G.F., Saraniti M., Ferry, D.K.; On the electron transient response in a 50nm MOSFET by Ensemble Monte Carlo Simulation in presence of the smoothed potential algorithm, Journal of Computational Electronics, vol. 1, pp 251-255, 2002.
10) Burger, W., Ma, G., Dragon, C.; Formicone, G., Pryor, B., Ren, X., RF-LDMOS: A silicon-Based, High Power, High Efficiency Linear Power Amplifier Technology, 2000 International Conference on Gallium-Arsenide MANufacturing TECHnology (MANTECH).
11) Brech, H.; Brakensiek, W.; Burdeaux, D.; Burger, W.; Dragon, C.; Formicone, G.; Pryor, B.; Rice, D.; Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations, IEDM '03 Technical Digest. 8-10 Dec. 2003
12) Burger, W., Brech, H., Burdeaux, D., Dragon, C.; Formicone, G., Honan, M., Pryor, B., Ren, X.; RF-LDMOS: a device technology for high power RF infrastructure applications; IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.
13) Formicone, G.F.; Burger, W.; Pryor, B.; Analysis of distributed multi-finger high-power transistors using the FDTD method, IEEE MTT-IMS2005, Long Beach, CA, USA
14) Johnston JA, Formicone G, Hamm TM, Santello M.; Assessment of across-muscle coherence using multi- vs. single- unit recordings, Exp Brain Res. 2010 Dec; 207(3-4):269-82. doi: 10.1007/s00221-010-2455-4. Epub 2010 Nov 3.
15) Santello, M, Formicone, G; Johnston, JA; Hamm, TH; Assessment of across-muscle coherence using multi- vs. single- unit signals, Soc. Neurosci. Abst. 399.3 (2005).
16) Formicone, G.F.; Boueri, F.; Burger, J.; Cheng, W.; Kim, Y.; Titizian, J.; RF LDMOS Power Transistor Technology for Pulsed L-band Transmitters, white paper published in www.rfglobalnet.com.
17) Formicone, G.F.; Boueri, F.; Burger, J.; Cheng, W.; Kim, Y.; Titizian, J.; Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications, European Microwave Week, 2008, Amsterdam, The Netherlands.
18) Formicone, G.F.; et al.; Reduced Bias Depolarization Effects in Pulse Operated AlGaN/GaN HEMT on Silicon, RADCOM-2011, Hamburg, Germany.
19) Formicone, G.F.; et al.; A 130W LDMOS for 2.7-3.5GHz Broadband Radar Applications, European Microwave Week, 2011, Manchester, UK.
20) J. Walker, G Formicone, F. Boueri, B. Battaglia; A 1-KW S-Band GaN Radar Transistor, IEEE COMCAS-2013, Israel.
21) J. Custer, G Formicone; High Efficiency Switch Mode GaN-based Power Amplifiers for P-Band Aerospace Applications, IEEE Aerospace Conference-2014, Montana, USA.
22) G Formicone, J. Custer; Mixed-Mode Class E-F-1 High Efficiency GaN Power Amplifiers for P-Band Space Applications, IEEE MTT-IMS2015, Phoenix, AZ, USA.
23) G Formicone, J. Custer; Analysis of a GaN/SiC UHF Radar Power Amplifier for Operation at 125V Bias, European Microwave Week, 2015, Paris, France.
24) G Formicone; RF Burn-in Analysis of 100V P-Band Aerospace GaN Radar Transistors, IEEE Aerospace Conference-2016, Montana, USA.
25) G Formicone et al.; Targeting Radar with 150V RF GaN HEMTs, Compound Semiconductor Magazine - March 2016, volume 22, issue 2.
26) G. Formicone, Thermal Analysis of 100V GaN RF Transistors for CW High Power ISM Applications, talk at IMAPS / RaMP, San Diego, March 2016
27) J. Custer, G. Formicone and J. L.B. Walker; Recent Advances in kW-level Pulsed GaN Transistors with Very High Efficiency, MRW2016 (International Conference on Microwave, Radar and Wireless Communications, Krakow, Poland, 2016).
28) G. Formicone et al.; Quest for Vacuum Tubes’ Replacement: 150V UHF GaN Radar Transistor, European Microwave Week, 2016, London, UK
29) G. Formicone et al.; Solid-State RF Power Amplifiers for ISM CW Applications Based on 100V GaN Technology, European Microwave Week, 2016, London, UK
30) G. Formicone et al. 150 V-Bias RF GaN for 1 kW UHF Radar Amplifiers, IEEE Compound Semiconductor Integrated Circuit Symposium, 2016, Austin, TX, USA.
31) G. Formicone et al.; A UHF 1-kW Solid-State Power Amplifier for Spaceborne SAR, IEEE / MTT-S PAWR-2017, Phoenix, AZ, USA
32) G. Formicone et al.; A GaN Power Amplifier for 100 VDC Bus in GPS L-band, IEEE / MTT-S PAWR-2017, Phoenix, AZ, USA
33) G. Formicone, J. Custer, and J. Burger; First Demonstration of a GaN-SiC RF Technology Operating Above 100 V in S-band; CS-MANTECH 2017, Indian Wells, CA, USA
34) F. Trevisan; A. Raffo; G. Bosi; V. Vadalà; G. Vannini; G. Formicone; J.Burger; J. Custer; 75-VDC GaN technology investigation from a degradation perspective; 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) April 20-21, 2017, Graz, Austria
35) G. Formicone et al.; Revisiting Power vs. Bandwidth in Broadband CW Amplifiers by Exploring 100 V Bias Operation, European Microwave Week, 2017, Nuremberg, Germany
36) G. Bosi, A. Raffo, V. Vadalà, F. Trevisan, G. Formicone, J. Burger, J. Custer, G. Vannini; Evaluation of High Voltage Transistor Reliability Under Nonlinear Dynamic Operation; European Microwave Week, 2017, Nuremberg, Germany
